Additional coating effects on textured ZnO : Al thin films as transparent conducting oxides for thin-film Si solar cells

2011 ◽  
Vol 20 (3) ◽  
pp. 294-297 ◽  
Author(s):  
Taeho Moon ◽  
Jin Hyung Jun ◽  
Hyun Lee ◽  
Wonki Yoon ◽  
Soohyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Transparent Conducting Oxides ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Si Solar Cells

Influence of dopant nature on the TCO properties of ZnO:M (M=Al, Ga, Sn, Si, Ge) thin films

2011 ◽  
Vol 1328 ◽  
Author(s):  
J. Clatot ◽  
G. Campet ◽  
M. Jean ◽  
M. Nistor ◽  
A. Rougier
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Properties ◽  
Transparent Conducting Oxides ◽  
Visible Region ◽  
Zno Thin Films ◽  
Conducting Oxides ◽  
Si Doping ◽  
Transparent Conducting ◽  
Cation Nature

ABSTRACTAiming at clarifying the opto-electronic properties of ZnO based n-type Transparent Conducting Oxides, TCOs, properties of ZnO thin films are studied as a function of cationic doping. In addition to commonly reported, Al and Ga trivalent dopant, similar performances are reported for Si doping. In the visible region, ZnO:Si (3 %) thin film exhibit a transmittance higher than 80 % for a resistivity as low as 8x10-4 Ω.cm when grown at 100 °C under 1.0 Pa oxygen pressure. The influence of tetravalent cations as dopant is also investigated through Sn and Ge additions. It shows that not only the oxidation state plays a role but also the cation nature. Indeed, ZnO:Sn thin films are insulating whereas the ZnO:Ge thin films are conductive with resistivity values higher than the ones of ZnO:Si thin films.

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