aluminum doped zinc oxide
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Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 195
Author(s):  
Htet Su Wai ◽  
Chaoyang Li

Aluminum-doped zinc oxide film was deposited on a glass substrate by mist chemical vapor deposition method. The influence of different aluminum doping ratios on the structural and optical properties of zinc oxide film was investigated. The XRD results revealed that the diffraction peak of (101) crystal plane was the dominant peak for the deposited AZO films with the Al doping ratios increasing from 1 wt % to 3 wt %. It was found that the variation of AZO film structures was strongly dependent on the Al/Zn ratios. The intertwined nanosheet structures were obtained when Zn/O ratios were greater than Al/O ratios with the deposition temperature of 400 °C. The optical transmittance of all AZO films was greater than 80% in the visible region. The AZO film deposited with Al doping ratio of 2 wt % showed the highest photocatalytic efficiency between the wavelength of 475 nm and 700 nm, with the high first-order reaction rate of 0.004 min−1 under ultraviolet radiation. The mechanism of the AZO film influenced by aluminum doping ratio during mist chemical vapor deposition process was revealed.


Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1546
Author(s):  
Ping-Hang Chen ◽  
Wen-Jauh Chen ◽  
Jiun-Yi Tseng

Transparent conductive oxide (TCO) film is the most widely used front electrode in silicon heterojunction (SHJ) solar cells. A copper metallization scheme can be applied to the SHJ process. The abundance of zinc in the earth’s crust makes aluminum-doped zinc oxide (AZO) an attractive low-cost substitute for indium-based TCOs. No work has focused on the properties of the copper and AZO layers on the textured silicon for solar cells. This work deposited an aluminum-doped zinc oxide layer and copper metal layer on textured (001) silicon by a sputtering to form Cu/AZO/Si stacks. The structures of Cu/AZO/Si are characterized by scanning electron microscope (SEM), scanning transmission electron microscope (STEM), and energy-dispersive X-ray spectrometer (EDS). The results show that the copper thin film detached from AZO in the valley of the textured silicon substrate at a temperature of 400 °C. Additionally, the gap between the copper and AZO layers increases as temperature increases, and the 65 nm thickness AZO layer was found to be preserved up to 800 °C.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
C. Bianchi ◽  
A. C. Marques ◽  
R. C. da Silva ◽  
T. Calmeiro ◽  
I. Ferreira

AbstractA new concept of oxide-metal-oxide structures that combine photothermoelectric effect with high reflectance (~ 80%) at wavelengths in the infrared (> 1100 nm) and high transmittance in the visible range is reported here. This was observed in optimized ITO/Ag/ITO structure, 20 nm of Silver (Ag) and 40 nm of Indium Tin Oxide (ITO), deposited on Aluminum doped Zinc Oxide (AZO) thin film. These layers show high energy saving efficiency by keeping the temperature constant inside a glazed compartment under solar radiation, but additionally they also show a photothermoelectric effect. Under uniform heating of the sample a thermoelectric effect is observed (S = 40 mV/K), but when irradiated, a potential proportional to the intensity of the radiation is also observed. Therefore, in addition to thermal control in windows, these low emission coatings can be applied as transparent photothermoelectric devices.


2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Lung-Chuan Tsao ◽  
Cheng-Kai Li ◽  
Yu-Kai Sun ◽  
Shih-Ying Chang ◽  
Tung-Han Chuang

Due to the combined advantages of low cost, good soldering properties, and appropriate melting temperature range, novel Sn8Zn3Bi1Mg active solder was developed for direct soldering of transparent conductive oxide (TCO) ceramic targets with oxygen-free copper at 200°C in air. The TCO specimens have aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) ceramics. The direct soldering process was performed without the need for flux or pre-metallization of the two transparent conductive oxides. The microstructure, phase constitution, melting characteristics, and soldering properties of the Sn8Zn3Bi1Mg active solder were investigated. The liquidus temperature of the Sn8Zn3Bi1Mg active solder was 198.6°C, which was very close to the binary Sn-Zn eutectic temperature of 198.5°C. The effect of temperature on the bonding strength of the solder joints was evaluated. The shear strengths of AZO/Cu and ZnO/Cu joints soldered with Sn8Zn3Bi1Mg active solder were 10.3 and 7.5 MPa at room temperature, respectively. Increasing the temperature from room temperature to 180°C reduced the bonding shear strengths of AZO/Cu and ZnO/Cu joints to 3.3 and 3.7 MPa, respectively.


2021 ◽  
Vol 22 (48) ◽  
Author(s):  
Ram Phul Yadav ◽  
Krishana Bahadur Rai ◽  
Shankar Prasad Shrestha

Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.


Author(s):  
Corson L. Cramer ◽  
Hsin Wang ◽  
Michael J. Lance ◽  
Artem Trofimov ◽  
Ercan Cakmak ◽  
...  

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