Methodology for the Selection of Technological Modes for the Synthesis of Transparent Conducting Oxides with Desired Properties

Transparent conducting oxides (TCOs) are widely used as a transparent electrode in various fields of opto-and semiconductor electronics. The main materials used today are indium-tin oxide, tin-antimony oxide and zinc-aluminum oxide. The authors have developed and improved the spray-pyrolysis method, which is one of the most promising methods of implementation in production. In this work, the study of tin dioxide doped with antimony coatings and the development of a methodology for the controlled synthesis of TCO, taking into account the effect of technological modes of deposition on the TCO parameters. The results of the performed studies contribute to the development of an automated technology for the synthesis of transparent conducting oxides with desired properties.

Water as Hole-Predatory Instrumental to Create Metal Nanoparticles on Triple-Conducting Oxides

Single-phase materials with mixed ionic and electronic conductivity underpin multiple solid-state electrochemical devices as promising electrodes. In particular, triple-conducting oxides that carry protons, oxygen ions, and electron holes simultaneously have...

Structural, Electronic, and Optical Properties of p-Type Semiconductors Cu2O and ZnRh2O4: A Self-Consistent Hybrid Functional Investigation

The p-type semiconductors Cu2O and ZnRh2O4 have been under investigation for potential applications as transparent conducting oxides. Here, we re-evaluate their structural, electronic, and optical properties by means of first-principles calculations employing density functional theory and a recently introduced self-consistent hybrid functional approach. Therein, the predefined fraction α of Hartree–Fock exact exchange is determined self-consistently via the inverse of the dielectric constant ε∞. The structural, electronic, and optical properties will be discussed alongside experimental results, with a focus on possible technological applications.

Tuning two-dimensional electron and hole gases at LaInO3/BaSnO3 interfaces by polar distortions, termination, and thickness

Two-dimensional electron gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications. Here, we explore the potential of interfaces formed by two lattice-matched wide-gap oxides of emerging interest, i.e., the polar, orthorhombic perovskite LaInO3 and the nonpolar, cubic perovskite BaSnO3, employing first-principles approaches. We find that the polar discontinuity at the interface is mainly compensated by electronic relaxation through charge transfer from the LaInO3 to the BaSnO3 side. This leads to the formation of a 2DEG hosted by the highly dispersive Sn-s-derived conduction band and a 2D hole gas of O-p character, strongly localized inside LaInO3. We rationalize how polar distortions, termination, thickness, and dimensionality of the system (periodic or non-periodic) can be exploited in view of tailoring the 2DEG characteristics, and why this material is superior to the most studied prototype LaAlO3/SrTiO3.

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p–n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 1012 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

Self-Assembled Triple (H+/O2−/e−) Conducting Nanocomposite of Ba-Co-Ce-Y-O into an Electrolyte for Semiconductor Ionic Fuel Cells

Triple (H+/O2−/e−) conducting oxides (TCOs) have been extensively investigated as the most promising cathode materials for solid oxide fuel cells (SOFCs) because of their excellent catalytic activity for oxygen reduction reaction (ORR) and fast proton transport. However, here we report a stable twin-perovskite nanocomposite Ba-Co-Ce-Y-O (BCCY) with triple conducting properties as a conducting accelerator in semiconductor ionic fuel cells (SIFCs) electrolytes. Self-assembled BCCY nanocomposite is prepared through a complexing sol–gel process. The composite consists of a cubic perovskite (Pm-3m) phase of BaCo0.9Ce0.01Y0.09O3-δ and a rhombohedral perovskite (R-3c) phase of BaCe0.78Y0.22O3-δ. A new semiconducting–ionic conducting composite electrolyte is prepared for SIFCs by the combination of BCCY and CeO2 (BCCY-CeO2). The fuel cell with the prepared electrolyte (400 μm in thickness) can deliver a remarkable peak power density of 1140 mW·cm−2 with a high open circuit voltage (OCV) of 1.15 V at 550 °C. The interface band energy alignment is employed to explain the suppression of electronic conduction in the electrolyte. The hybrid H+/O2− ions transport along the surfaces or grain boundaries is identified as a new way of ion conduction. The comprehensive analysis of the electrochemical properties indicates that BCCY can be applied in electrolyte, and has shown tremendous potential to improve ionic conductivity and electrochemical performance.

Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from −1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).

Optical Losses of Frontal Layers in Superstrate CdS/CdTe Solar Cells Using OPAL2

In this paper, optical losses in CdS/CdTe solar cells are calculated on the basis of the designated reflective index of various frontal layers using an OPAL2 calculator for the first time. Two types of glass (0.1 mm ultra-thin Schott and 1.1 mm standard borosilicate glass) were assumed to be coated by different Transparent-Conducting-Oxides (TCOs) such as SnO2:F, ZnO:Al, and ITO forming frontal layers for CdS/CdTe solar cells in superstrate configuration. Absorption, reflectance, transmittance, and consequently optical bandgap energies are calculated as a function of common thicknesses, used in the literature. The results show that an increase in TCO thickness led to a decrease in optical band gap as well as an enhancement in contact potential difference, which can deteriorate device performance. The optimum thickness of 100 nm for SnO2:F was calculated, while 200 nm for ZnO:Al and ITO show reasonable optical losses caused by reflections at the interfaces’ and the layer’s absorption. It is seen that 80 to 150 nm CdS on ITO might be an effective range to satisfy a high short circuit current and low defect densities at the CdS/CdTe interface. Finally, a minimum 2 μm thickness for the CdTe on the ultra-thin Schott glass coated by optimum layers can result in the highest short circuit current of 28.69 mA/cm2. This work offers a practical equivalent strategy to be applied for any superstrate solar cells containing TCO and CdS frontal layers.