Study of base series resistance losses in single and double emitter silicon solar cells through simulations and experiments

2008 ◽  
Vol 16 (7) ◽  
pp. 577-584 ◽  
Author(s):  
K. Kotsovos ◽  
K. Misiakos
2012 ◽  
Vol 8 (4) ◽  
pp. 628-631 ◽  
Author(s):  
Tao Li ◽  
Wenjing Wang ◽  
Chunlan Zhou ◽  
Zhengang Liu ◽  
Lei Zhao ◽  
...  

2007 ◽  
Vol 15 (6) ◽  
pp. 493-505 ◽  
Author(s):  
A. Mette ◽  
D. Pysch ◽  
G. Emanuel ◽  
D. Erath ◽  
R. Preu ◽  
...  

2018 ◽  
Vol 6 (9) ◽  
pp. 1627-1632 ◽  
Author(s):  
Rabab R. Bahabry ◽  
Amir N. Hanna ◽  
Arwa T. Kutbee ◽  
Abdurrahman Gumus ◽  
Muhammad. M. Hussain

2011 ◽  
Vol 95 (1) ◽  
pp. 53-55 ◽  
Author(s):  
Dae Hee Jang ◽  
Ji Hoon Ko ◽  
Ju Wan Kang ◽  
Jong Hwan Kim ◽  
Ji-Weon Jeong

2019 ◽  
Author(s):  
Jan-Martin Wagner ◽  
Koundinya Upadhyayula ◽  
Jürgen Carstensen ◽  
Rainer Adelung

1999 ◽  
Vol 1 (2) ◽  
pp. 117-129
Author(s):  
Gamal M. Eldallal ◽  
Mohamed Y. Feteha ◽  
Mostafa E. Mousaa

A realistic distributed equivalent circuit for the buried emitter silicon solar cell is presented taking into consideration the carriers paths through the planar and vertical junctions. In addition, a new theoretical model for the cell characteristics including the cell's mismatching, series resistance, different junctions (planar and vertical) and junctions geometry is considered in this work. The results are compared with the published data.


2009 ◽  
Vol 3 (7-8) ◽  
pp. 227-229 ◽  
Author(s):  
Jonas Haunschild ◽  
Markus Glatthaar ◽  
Martin Kasemann ◽  
Stefan Rein ◽  
Eicke R. Weber

2008 ◽  
Vol 1101 ◽  
Author(s):  
Thomas Soderstrom ◽  
Franz-Joseph Haug ◽  
Xavier Niquille ◽  
Oscar Cubero ◽  
Stéphanie Perregaux ◽  
...  

AbstractIn the nip or substrate configuration thin film silicon solar cells, the choice of front TCO contact is critical because there is a trade off between its transparency which influences the current in the solar cell and its conductivity which influences the series resistance. Here, we investigate the optical behavior of two different TCO front contacts, either a 70 nm thick, nominally flat ITO or a 2 μm thick rough LPCVD ZnO. The back contact consists of LP-CVD ZnO with random texture. First we investigate the influence of the rough and flat front TCOs in μc-Si:H and a-Si:H solar cells. With the back contact geometries used in this work, the antireflection properties of ITO are effective at providing as much light trapping as the rough LP-CVD ZnO. In the second part, we demonstrate that total of 25 to 26 mA/cm2is achievable in nip micromorph tandem cells and show short circuit current up to 11.7 mA/cm2 using an SIO based intermediate reflector.


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