MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

2003 ◽  
Vol 0 (7) ◽  
pp. 2253-2256 ◽  
Author(s):  
S. J. Chang ◽  
Y. K. Su ◽  
Y. C. Lin ◽  
R. W. Chuang ◽  
C. S. Chang ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Patterned Sapphire Substrates

Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates

2009 ◽  
Vol 156 (11) ◽  
pp. H874 ◽  
Author(s):  
Ray-Ming Lin ◽  
Yuan-Chieh Lu ◽  
Sheng-Fu Yu ◽  
YewChung Sermon Wu ◽  
Chung-Hao Chiang ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

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