InGaN-based Blue Light-Emitting Diodes with Electron Blocking Layer Fabricated on Patterned Sapphire Substrates

2010 ◽  
Author(s):  
K. T. Liu ◽  
C. K. Hsu ◽  
S. J. Chang
2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.


2013 ◽  
Vol 22 (5) ◽  
pp. 058503 ◽  
Author(s):  
Fang Zhao ◽  
Guang-Rui Yao ◽  
Jing-Jing Song ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
...  

2003 ◽  
Vol 0 (7) ◽  
pp. 2253-2256 ◽  
Author(s):  
S. J. Chang ◽  
Y. K. Su ◽  
Y. C. Lin ◽  
R. W. Chuang ◽  
C. S. Chang ◽  
...  

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