Electron scattering on the short-range potential of crystal lattice defects in gallium nitride

2012 ◽  
Vol 9 (3-4) ◽  
pp. 842-846
Author(s):  
Orest Malyk
Keyword(s):  
Gallium Nitride ◽  
Crystal Lattice ◽  
Electron Scattering ◽  
Short Range ◽  
Lattice Defects ◽  
Short Range Potential ◽  
Range Potential ◽  
Crystal Lattice Defects

Electron scattering on the short-range potential of the crystal lattice defects in ZnO

2014 ◽  
Vol 92 (11) ◽  
pp. 1372-1379 ◽  
Author(s):  
O.P. Malyk
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Impurity Concentration ◽  
Short Range ◽  
Optical Phonons ◽  
Short Range Potential ◽  
Hall Factor ◽  
Range Potential ◽  
Temperature Dependences ◽  
Crystal Lattice Defects

The processes of electron scattering on a short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, and neutral and ionized impurities in wurtzite n-ZnO with impurity concentration ∼1 × 1017 cm−3 are considered. The temperature dependences of electron mobility and Hall factor in the range 15/550 K are calculated.

Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4and GaP

2009 ◽  
Vol 6 (5) ◽  
pp. 1112-1115 ◽  
Author(s):  
Sergei L. Pyshkin ◽  
John Ballato ◽  
Michael Bass ◽  
George Chumanov ◽  
Giorgio Turri
Keyword(s):  
Crystal Lattice ◽  
Lattice Defects ◽  
Time Dependent ◽  
Defects And Impurities ◽  
Crystal Lattice Defects
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