Quantum Hall Effect across Graphene Grain Boundary

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.

Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes

Precise angle-resolved magnetoresistance (ARMR) and magnetization measurements have revealed (i) strong charge transport and magnetic anisotropy and (ii) emergence of a huge number of magnetic phases in the ground state of isotopicaly 11B-enriched single crystals of TmB12 antiferromagnetic (AF) metal with fcc crystal structure and dynamic charge stripes. We analyze for the first time the angular H-φ phase diagrams of AF state of Tm11B12 reconstructed from experimental ARMR and magnetization data arguing that the symmetry lowering leads to the appearance of several radial phase boundaries between different phases in the AF state. It is proposed that the suppression of the indirect Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange along 〈110〉 directions between nearest neighboring magnetic moments of Tm3+ ions and subsequent redistribution of conduction electrons to quantum fluctuations of the electron density (dynamic stripes) are the main factors responsible for the anisotropy. Essential (more than 25 % at T = 2 K) anisotropy of the Neel field in the (110) plane was found in Tm11B12 unlike to isotropic AF-P boundary in the H-φ phase diagrams of Ho11B12. Magnetoresistance components are discussed in terms of charge carrier scattering on the spin density wave, itinerant ferromagnetic nano-domains and on-site Tm3+ spin fluctuations.

Investigating charge carrier scattering processes in anisotropic semiconductors through first-principles calculations: the case of p-type SnSe

Efficient ab initio computational methods for the calculation of the thermoelectric transport properties of materials are of great interest for energy harvesting technologies.

Mechanical removal of surface residues on graphene for TEM characterizations

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

Mechanical Removal of Surface Residues on Graphene for TEM Characterizations

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

A Unified Pervasive Linebroadening Function for Quantum Wells in Light Emitting Diodes

The broadening functions for quantum wells in LEDs and laser diodes below the lasing threshold are examined. Inhomogeneous and homogeneous broadening mechanisms are included. Hydrogen-atom-like exciton and the electron-hole plasma recombination models are considered. Material disorder and the Urbach tail are reviewed as the main reasons for the inhomogeneous broadening. Charge carrier scattering and relaxation times in the conduction and valence bands are examined as the origin for the homogeneous lifetime broadening. Two homogeneous lineshapes are compared using the momentum relaxation times obtained from the electron and hole mobilities available for GaAs. In addition to crystal disorder, the mutual collision of charge carriers in the quantum wells is examined as the reason for the relaxation time shortening. The analogy to pressure broadening in gases is used to combine the proper homogeneous and inhomogeneous broadening functions to a unified quantum well lineshape.

Understanding the thermally activated charge transport in NaPbmSbQm+2 (Q = S, Se, Te) thermoelectrics: weak dielectric screening leads to grain boundary dominated charge carrier scattering

Addressing the irregular electrical conductivity in PbQ–NaSbQ2 thermoelectrics. Increasing the NaSbSe2 fraction weakens charge carrier screening and strengthens GB scattering.