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gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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10.1007/10860305_180
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2005
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pp. 1-21
Author(s):
Keyword(s):
Gallium Arsenide
◽
Defect States
◽
Deep Defect
◽
Gallium Arsenide Phosphide
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gallium arsenide (GaAs), intrinsic or unidentified deep defect states
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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10.1007/10860305_95
◽
2005
◽
pp. 1-3
Author(s):
Keyword(s):
Gallium Arsenide
◽
Defect States
◽
Deep Defect
Download Full-text
gallium arsenide (GaAs), radiation-induced deep defect states: hole traps induced by electron irradiation
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
◽
10.1007/10860305_101
◽
2005
◽
pp. 1-2
Author(s):
Keyword(s):
Gallium Arsenide
◽
Electron Irradiation
◽
Defect States
◽
Deep Defect
◽
Radiation Induced
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gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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10.1007/10860305_182
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2005
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pp. 1-4
Author(s):
Keyword(s):
Gallium Arsenide
◽
Defect States
◽
Deep Defect
◽
Gallium Arsenide Antimonide
Download Full-text
gallium arsenide (GaAs), radiation-induced deep defect states: electron traps induced by electron irradiation
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
◽
10.1007/10860305_100
◽
2005
◽
pp. 1-2
Author(s):
Keyword(s):
Gallium Arsenide
◽
Electron Irradiation
◽
Defect States
◽
Electron Traps
◽
Deep Defect
◽
Radiation Induced
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Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions
Materials Science and Engineering B
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10.1016/s0921-5107(02)00026-0
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2002
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Vol 93
(1-3)
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pp. 85-89
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Cited By ~ 2
Author(s):
A Krtschil
◽
A Kielburg
◽
H Witte
◽
A Krost
◽
J Christen
◽
...
Keyword(s):
Electrical Characterization
◽
Defect States
◽
Deep Defect
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gallium nitride (GaN), properties of deep defect states
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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10.1007/10860305_23
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2005
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pp. 1-7
Author(s):
Keyword(s):
Gallium Nitride
◽
Defect States
◽
Deep Defect
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boron phosphide (BP), deep defect states
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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10.1007/10860305_18
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2005
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pp. 1-4
Author(s):
Keyword(s):
Defect States
◽
Deep Defect
◽
Boron Phosphide
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Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG
Chemistry of Materials
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10.1021/acs.chemmater.0c02449
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2020
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Author(s):
Christopher Linderälv
◽
Daniel Åberg
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Paul Erhart
Keyword(s):
Oxygen Vacancies
◽
Luminescence Quenching
◽
Defect States
◽
Deep Defect
◽
Recombination Pathway
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ChemInform Abstract: ACCURATE DETERMINATION OF SHALLOW ZINC DIFFUSION PROFILES IN GALLIUM PHOSPHIDE GALLIUM ARSENIDE PHOSPHIDE (GAAS0.1P0.9) USING ANODIC OXIDATION AND A DOUBLE RADIOACTIVE TRACER TECHNIQUE
Chemischer Informationsdienst
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10.1002/chin.197725007
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1977
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Vol 8
(25)
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pp. no-no
Author(s):
J. C. VERPLANKE
Keyword(s):
Gallium Arsenide
◽
Gallium Phosphide
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Accurate Determination
◽
Radioactive Tracer
◽
Tracer Technique
◽
Radioactive Tracer Technique
◽
Gallium Arsenide Phosphide
◽
Zinc Diffusion
◽
Diffusion Profiles
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Deep defect states in a-Si:(H,C) alloys
Materials Chemistry and Physics
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10.1016/0254-0584(95)01597-n
◽
1996
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Vol 43
(1)
◽
pp. 19-24
Author(s):
Shu-Ya Lin
Keyword(s):
Defect States
◽
Deep Defect
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