With the global pandemic caused by the COVID-19 virus, vast and widespread research on drug therapy is in progress around the world. In this respect, one of the most widely...
Microstructure of sphalerite (3C) boron phosphide, BP, produced by self-propagated high-temperature synthesis has been studied by high-resolution transmission electron microscopy. Along with numerous twins on the {111}3C plane, layers of wurtzite (2H) polymorphic modification and previously unknown for BP rhombohedral (3R) structure were found which indicates trimorphism of BP.
Abstract
Silicon solar cells with selective contacts based on boron phosphide (BP) demonstrate a high potential according to simulation. However, the influence of defects created at the BP/Si interface during BP deposition is a critical issue for solar cell performance. The computer simulations were performed to understand how the defects in the near-surface region and at the interface affect the photovoltaic properties. Calculations of the dependence of the characteristics of solar cells on parameters such as the density of interface states, the concentration of defects in the near-surface region, and its width were made.
Self-energy corrected band-gap tuning induced by strain in the hexagonal boron phosphide monolayer
