Thermometry Based on the Melting Line of 3He

Author(s):  
Franco Pavese ◽  
Gianfranco Molinar Min Beciet
Keyword(s):  
2006 ◽  
Vol 74 (18) ◽  
Author(s):  
A. Crisan ◽  
Y. Tanaka ◽  
A. Iyo ◽  
L. Cosereanu ◽  
K. Tokiwa ◽  
...  
Keyword(s):  

2013 ◽  
Vol 39 (5) ◽  
pp. 427-429 ◽  
Author(s):  
L. N. Yakub

2011 ◽  
Vol 24 (5) ◽  
pp. 055014
Author(s):  
Heon-Jung Kim ◽  
M Sasaki ◽  
A Ohnishi ◽  
N Asaka ◽  
M Kitaura ◽  
...  

Metrologia ◽  
1991 ◽  
Vol 28 (4) ◽  
pp. 353-354 ◽  
Author(s):  
G F Molinar ◽  
V E Bean ◽  
J Houck ◽  
B Welch

2019 ◽  
Vol 122 (17) ◽  
Author(s):  
A. M. Kondratyev ◽  
A. D. Rakhel
Keyword(s):  

2001 ◽  
Vol 685 ◽  
Author(s):  
Alexander Limanov ◽  
Vladimir Borisov

AbstractThis paper deals with some results of research in SLS performed in the excimer laser laboratory of TRINITI research institute, Russia, where different types of excimer lasers have been developed and manufactured. The research used a new simple SLS approach based on single-axis (i.e., cylinder) projection optics. The method employs a long single melting line extended many centimeters in length. The line is formed by projection through a single slit in a bulk metal mask. Some aspects of the efficiency, potential, and technical challenge of the method are discussed. This method is particularly useful with low pulse energy and high frequency excimer lasers, and one of the most efficient ways of providing directionally crystallized Si films over a large area. Several types of excimer lasers were tested for the SLS technique. It was found that among various parameters, pulse duration is a more important one, e.g., an increase in pulse duration from 25 to 150 ns results in enlargement of lateral growth distance by about three times.


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