Low-Temperature Epitaxial Growth of Thin Metal Films: In Situ Electrical Resistivity Study

1997 ◽  
pp. 253-261
Author(s):  
M. Jalochowski ◽  
M. Hoffmann ◽  
E. Bauer
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Resistivity Study ◽  
Electrical Resistivity Study

In situ electron microscope studies on epitaxial growth of thin metal films on metal substrates

1976 ◽  
Vol 32 (2) ◽  
pp. 185-190 ◽  
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
G. Honjo
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Metal Substrates

scholarly journals Low-temperature epitaxial growth of thin metal films

1990 ◽  
Vol 41 (8) ◽  
pp. 5410-5413 ◽  
Author(s):  
J. W. Evans ◽  
D. E. Sanders ◽  
P. A. Thiel ◽  
Andrew E. DePristo
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

The Influence of Charge Effects on the Growth and Electrical Resistivity of Thin Metal Films

1967 ◽  
Vol 38 (4) ◽  
pp. 1986-1987 ◽  
Author(s):  
D. I. Kennedy ◽  
R. E. Hayes ◽  
R. W. Alsford
Keyword(s):  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Charge Effects

scholarly journals In Situ Transmission X-ray Micro-Diffraction from Thin Metal Films Electrodeposited in Microfluidic Channels

2020 ◽  
Vol 167 (11) ◽  
pp. 112505
Author(s):  
T. Wiegmann ◽  
J. Drnec ◽  
F. Reikowski ◽  
J. Stettner ◽  
F. Maroun ◽  
...  
Keyword(s):  
Metal Films ◽  
Thin Metal ◽  
Microfluidic Channels ◽  
Thin Metal Films ◽  
X Ray

Refractory Metals Growth on MBE GaAs

1985 ◽  
Vol 48 ◽  
Author(s):  
J. Bloch ◽  
M. Heiblum
Keyword(s):  
Crystalline Structure ◽  
Growth Mechanism ◽  
Metal Films ◽  
Refractory Metals ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Experimental Conditions ◽  
Substrate Temperatures ◽  
And Tungsten

ABSTRACTNolybenum and tungsten metals have been grown on an MBE grown (100)GaAs at various substrate temperatures. RHEED technique was used in situ to analyse the crystalline structure and the growth mechanism of the mechanism of the thin metal films. It was found that Mo epilayers can be grown on the (100) GaAs at temperatures between 150–400°C. The epitaxal arrangement is (111)Mo || (100)GaAs with [011]Mo || [011] GaAs. Tungsten films are not growing epitaxially under similar experimental conditions.

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