Raman Scattering Characterization of Strain in (001) and (111) GaSb/AlSb Single Quantum Wells and Superlattices and in Metastable GexSn1-x Alloys

1991 ◽  
pp. 219-227
Author(s):  
G. P. Schwartz
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

1984 ◽  
Vol 68 (1) ◽  
pp. 398-405 ◽  
Author(s):  
R.D. Dupuis ◽  
R.C. Miller ◽  
P.M. Petroff
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Growth and photoluminescence characterization of pseudomorphic SiGe single quantum wells

1993 ◽  
Vol 127 (1-4) ◽  
pp. 411-415 ◽  
Author(s):  
F. Schäffler ◽  
M. Wachter ◽  
H.-J. Herzog ◽  
K. Thonke ◽  
R. Sauer
Keyword(s):  
Quantum Wells ◽  
Single Quantum

scholarly journals Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
Takeya Unuma ◽  
Kensuke Kobayashi ◽  
Aishi Yamamoto ◽  
Masahiro Yoshita ◽  
Yoshiaki Hashimoto ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Particle ◽  
Single Quantum ◽  
Electronic Raman Scattering

Characterization of ZnSe/ZnMgBeSe single quantum wells

2000 ◽  
Vol 7 (3-4) ◽  
pp. 576-580 ◽  
Author(s):  
J.H Chang ◽  
M.W Cho ◽  
S.K Hong ◽  
K Godo ◽  
H Makino ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

Spin-flip Raman scattering from donor-bound electrons inCd1−xMnxTe/Cd1−yMgyTe single quantum wells

1997 ◽  
Vol 55 (24) ◽  
pp. 16376-16384 ◽  
Author(s):  
R. Meyer ◽  
M. Dahl ◽  
G. Schaack ◽  
A. Waag
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Single Quantum ◽  
Spin Flip ◽  
Bound Electrons

On the preparation and characterization of high‐quality GaAs single quantum wells

1992 ◽  
Vol 71 (10) ◽  
pp. 5263-5265 ◽  
Author(s):  
R. Hey ◽  
M. Höricke ◽  
A. Frey ◽  
V. Egorov ◽  
P. Krispin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality
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