Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328186 ◽

2002 ◽

Author(s):

A.H. Bensaoula ◽

A. Freundlich ◽

V. Rossignol ◽

A. Bensaoula ◽

G. Neu ◽

...

Keyword(s):

Optical Properties ◽

Structural And Optical Properties

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Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328254 ◽

2002 ◽

Author(s):

G.I. Ng ◽

D. Pavlidis ◽

A. Samelis ◽

D. Pehlke ◽

J.C. Garcia ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Reduced Toxicity

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Spatial distribution of charge carrier temperature and lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328209 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Waldmuller ◽

M. Lang ◽

P. Wellmann ◽

A. Winnacker

Keyword(s):

Spatial Distribution ◽

Charge Carrier ◽

Photoluminescence Spectroscopy ◽

Carrier Temperature

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Optically-pumped all-epitaxial wafer-fused 1.52-μm vertical-cavity lasers

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328234 ◽

2002 ◽

Author(s):

D.I. Babic ◽

J.J. Dudley ◽

K. Streubel ◽

R.P. Mirin ◽

E.L. Hu ◽

...

Keyword(s):

Optically Pumped ◽

Vertical Cavity Lasers ◽

Vertical Cavity ◽

Cavity Lasers

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Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328183 ◽

2002 ◽

Author(s):

J.N. Baillargeon ◽

A.Y. Cho ◽

R.J. Fischer ◽

P.J. Pearah ◽

K.Y. Cheng

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Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328291 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Hopkinson ◽

J.P.R. David ◽

O.P. Kowalski ◽

D.J. Mowbray ◽

M.S. Skolnick

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

High Quality

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Optimization of interface control layer for InP Schottky barriers

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328202 ◽

2002 ◽

Author(s):

S. Kasai ◽

H. Hasegawa

Keyword(s):

Schottky Barriers ◽

Interface Control ◽

Control Layer

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Monolayer control of chemical beam etching for regrowth

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328303 ◽

2002 ◽

Author(s):

T.H. Chiu ◽

W.T. Tsang ◽

R.M. Kapre ◽

M.D. Williams ◽

J.F. Ferguson

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Optical monitoring of growth surfaces-reflectance-difference spectroscopy

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328309 ◽

2002 ◽

Author(s):

I. Kamiya

Keyword(s):

Optical Monitoring ◽

Difference Spectroscopy ◽

Reflectance Difference Spectroscopy

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Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328252 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Agarwala ◽

I. Adesida ◽

C. Caneau ◽

R. Bhat

Keyword(s):

Reactive Ion Etching ◽

Ion Etching

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices

Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors

Spatial distribution of charge carrier temperature and lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy

Optically-pumped all-epitaxial wafer-fused 1.52-μm vertical-cavity lasers

Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy

Optimization of interface control layer for InP Schottky barriers

Monolayer control of chemical beam etching for regrowth

Optical monitoring of growth surfaces-reflectance-difference spectroscopy

Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices

Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors

Spatial distribution of charge carrier temperature and lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy

Optically-pumped all-epitaxial wafer-fused 1.52-μm vertical-cavity lasers

Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy

Optimization of interface control layer for InP Schottky barriers

Monolayer control of chemical beam etching for regrowth

Optical monitoring of growth surfaces-reflectance-difference spectroscopy

Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)
Latest Publications