STUDY OF THE COMPOSITION OF GaAsBi FILMS OBTAINED BY PULSED LASER

Методом одноосного холодного прессования были изготовлены мишени GaAsBi с содержанием Bi 1 и 22%. Из полученных мишеней впервые было проведено импульсное лазерное напыления тонких пленок GaAsBi на подложках GaAs и Si. Были исследованы состав, спектры комбинационного рассеяния и фотолюминесценции тонких пленок GaAsBi, полученных из мишеней с содержанием Bi 1 и 22%. По данным спектров фотолюминесценции тонких пленок GaAsBi на подложках GaAs определено, максимальное содержание Bi в пленках не превышает 2,7 %. Полученные результаты хорошо коррелируют с результатами энергодисперсионного анализа, состав пленок, полученных из мишеней с содержанием Bi 1 и 22% - GaAs Bi и GaAsBi. Установлено, что фононная мода LO (GaBi). связанная с нарушением упорядоченности при смешении фаз GaAs и GaBi, находиться на частоте 181 см. Для тонкой пленки, полученной на подложке Si наблюдалась мода LO (GaAs), которая менее выражена и смещена на 3 см влево, в то время как запрещенная правилами отбора мода TO (GaAs) имеет более высокую интенсивность и ее смещение составляет около 1 см относительно частоты TO (GaAs) моды тонкой пленки, полученной на подложке GaAs . Uniaxial cold pressing was used to fabricate the GaAsBi targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAsBi thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAsBi films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAsBi films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% - GaAs Bi and GaAsBi. It was found that the LO(GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm. For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.

Investigation of the Phonon Spectra in CdSe/CdS Nanoplatelets by Raman Spectroscopy

We report the phonon spectra of core/shell CdSe/CdS nanoplatelets with different shell thicknesses studied using Raman scattering. The nanoplatelets are rectangular colloidal nanocrystals, with thicknesses of core and shell layers of a few nanometers. The Raman spectra show features corresponding to the dominating longitudinal optical (LO) and surface optical (SO) phonon modes of the CdSe core in CdS shell located in the frequency regions of 200-210 and 250-290 cm-1, respectively. As the shell thickness increases, the phonon modes reveal a frequency shift and a change in intensity. The frequency shift associated with a change in the stress state in the core and shell, as well as with confinement effects is discussed. The phonon mode intensities are determined by the thickness of the shell and the proximity to resonant Raman scattering conditions.

Vector optomechanical entanglement

The polarizations of optical fields, besides field intensities, provide more degrees of freedom to manipulate coherent light–matter interactions. Here, we propose how to achieve a coherent switch of optomechanical entanglement in a polarized-light-driven cavity system. We show that by tuning the polarizations of the driving field, the effective optomechanical coupling can be well controlled and, as a result, quantum entanglement between the mechanical oscillator and the optical transverse electric mode can be coherently and reversibly switched to that between the same phonon mode and the optical transverse magnetic mode. This ability to switch optomechanical entanglement with such a vectorial device can be important for building a quantum network being capable of efficient quantum information interchanges between processing nodes and flying photons.

Fröhlich interaction dominated by a single phonon mode in CsPbBr3

The excellent optoelectronic performance of lead halide perovskites has generated great interest in their fundamental properties. The polar nature of the perovskite lattice means that electron-lattice coupling is governed by the Fröhlich interaction. Still, considerable ambiguity exists regarding the phonon modes that participate in this crucial mechanism. Here, we use multiphonon Raman scattering and THz time-domain spectroscopy to investigate Fröhlich coupling in CsPbBr3. We identify a longitudinal optical phonon mode that dominates the interaction, and surmise that this mode effectively defines exciton-phonon scattering in CsPbBr3, and possibly similar materials. It is additionally revealed that the observed strength of the Fröhlich interaction is significantly higher than the expected intrinsic value for CsPbBr3, and is likely enhanced by carrier localization in the colloidal perovskite nanocrystals. Our experiments also unearthed a dipole-related dielectric relaxation mechanism which may impact transport properties.

Direct probing of phonon mode specific electron–phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides

Electron–phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report direct probing of phonon mode specific electron–phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron–phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, the layer-number sensitive higher-order inelastic electron–phonon scatterings, which are confirmed to be generic in all four semiconducting layers, can be attributed to differing electronic structures, symmetry, and quantum interference effects during the scattering processes in the ultrathin semiconducting films.