Photoelectron Spectroscopy of Transition-Metal Oxide Interfaces

2018 ◽  
pp. 87-105
Author(s):  
M. Sing ◽  
R. Claessen
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Transition Metal Oxide ◽  
Oxide Interfaces

scholarly journals Electronic structure variations of polar and nonpolar ZnO lattices with nitrogen-ion bombardment using synchrotron-based in situ photoemission and X-ray absorption spectroscopy

2020 ◽  
Vol 27 (1) ◽  
pp. 83-89
Author(s):  
Yuyang Huang ◽  
Yaping Li ◽  
Meng Wu ◽  
Hui-Qiong Wang ◽  
Xuebin Yuan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Transition Metal Oxide ◽  
Material Design ◽  
Surface Polarity ◽  
X Ray ◽  
Nitrogen Ion ◽  
X Ray Absorption

Surface polarity with different crystal orientations has been demonstrated as a crucial parameter in determining the physical properties and device applications in many transition metal oxide and semiconductor compound systems. The influences of surface polarity on electronic structures in nitrogen-incorporated ZnO lattices have been investigated in the present work. The successful doping of nitrogen atoms in ZnO lattices is suggested by the existence of N-related chemical bonds obtained from X-ray photoelectron spectroscopy analysis where a pronounced N–Zn peak intensity has been observed in the (000\bar 1)-terminated polar ZnO compound compared with the (10\bar 10)-terminated nonpolar ZnO compound. An energy shift of the valence band maximum towards the Fermi level has been resolved for both polar and nonpolar ZnO lattices, whereas a charge redistribution of the O 2p hybridized states is only resolved for o-plane ZnO with a polar surface. Angular-dependent X-ray absorption analyses at the O K-edge reveal enhanced surface-state contributions and asymmetric O 2p orbital occupations in the (000\bar 1)-terminated o-plane ZnO compound. The results shed light on the efficient nitrogen doping in ZnO lattices with polar surfaces. The comprehensive electronic structure investigations of correlations between impurity doping and surface polarity in ZnO lattices may also offer guidance for the material design in other transition metal oxide and semiconductor systems.

Optimisation of Adhesion at Transition Metal-Oxide Interfaces by Processing at Well-Chosen Oxygen Activity

1999 ◽  
Vol 586 ◽  
Author(s):  
M. Backhaus-Ricoult
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Interfacial Energy ◽  
Transition Metal Oxide ◽  
Adhesion Energy ◽  
Oxygen Activity ◽  
Oxide Interface ◽  
Stability Range ◽  
Oxide Interfaces ◽  
Adsorption Energies

ABSTRACTTransition metal-oxide interfaces suffer within their thermodynamic stability range Gibbs' adsorption and show important changes in chemical composition with oxygen activity. As a consequence, specific free interfacial energy and adhesion energy also vary with oxygen activity. Adhesion at a given non-reactive transition metal-oxide interface can then be optimised by establishing the proper oxygen activity during processing or by a post-treatment at the interface.In the present work, the approach of Gibbs' adsorption is extended to crystalline, anisotropic (special) transition metal-oxide interfaces. It is demonstrated that interfacial energy varies with oxygen activity. The variation in energy is studied for different adsorption energies, temperatures and interfacial planes.

Electronic structure at transition metal phthalocyanine-transition metal oxide interfaces: Cobalt phthalocyanine on epitaxial MnO films

2015 ◽  
Vol 142 (10) ◽  
pp. 101918 ◽  
Author(s):  
Mathias Glaser ◽  
Heiko Peisert ◽  
Hilmar Adler ◽  
Umut Aygül ◽  
Milutin Ivanovic ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Cobalt Phthalocyanine ◽  
Metal Phthalocyanine ◽  
Oxide Interfaces
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