Electron Irradiation Effects in Carbon Nanostructures: Surface Reconstruction, Extreme Compression, Nanotube Growth and Morphology Manipulation

2008 ◽  
pp. 155-156
Author(s):  
M. Terrones ◽  
L. Sun ◽  
J. A. Rodriguez-Manzo ◽  
H. Terrones ◽  
F. Banhart
Keyword(s):  
Surface Reconstruction ◽  
Electron Irradiation ◽  
Carbon Nanostructures ◽  
Irradiation Effects ◽  
Nanotube Growth

Electron Irradiation Effects in Carbon Nanostructures: Surface Reconstruction, Extreme Compression and Nanotube Growth

2008 ◽  
Vol 14 (S2) ◽  
pp. 684-685
Author(s):  
M Terrones
Keyword(s):  
New Mexico ◽  
Surface Reconstruction ◽  
Electron Irradiation ◽  
Carbon Nanostructures ◽  
Irradiation Effects ◽  
Nanotube Growth

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Electron irradiation effects in multi-layer nitric oxide films on Ge(100)

2002 ◽  
Vol 414 (2) ◽  
pp. 251-255 ◽  
Author(s):  
M Sanders ◽  
J.H Craig
Keyword(s):  
Nitric Oxide ◽  
Electron Irradiation ◽  
Oxide Films ◽  
Irradiation Effects

Irradiation effects in carbon nanostructures

1999 ◽  
Vol 62 (8) ◽  
pp. 1181-1221 ◽  
Author(s):  
Florian Banhart
Keyword(s):  
Carbon Nanostructures ◽  
Irradiation Effects

scholarly journals Electron Irradiation Effects in Au thin Flms

2021 ◽  
Author(s):  
Franciele Silva Mendes de Oliveira ◽  
Maurício Jesuíno Nogueira ◽  
Zacarias Eduardo Fabrim ◽  
Paulo F P Fichtner
Keyword(s):  
Electron Irradiation ◽  
Driving Forces ◽  
Atomic Displacement ◽  
Irradiation Effects ◽  
Coverage Area ◽  
Model Calculations ◽  
Thermally Induced ◽  
Atomic Displacements ◽  
Silicon Nitride Membrane ◽  
Au Thin Films

Abstract Room temperature 200 keV electron irradiation effects on the area retraction behavior presented by 6.75 nm thick Au thin films deposited over a self-standing SiO 2 / silicon nitride membrane are investigated as a function of the irradiation fluence Φ. The as-deposited films already contain void discontinuities. The void growth behavior is investigated considering irradiation and thermally-induced surface atoms’ migration. The film’s coverage area A(Φ) and void perimeter P(Φ), obtained via Transmission Electron Microscopy observations, allow for calculating the atomic displacement causing the area retraction. This data is compared with model calculations of irradiation and thermally-induced atomic fluxes. The results demonstrate that the balance between the thermal and irradiation processes strongly depends on the choice of the surface thermal diffusivity values, which present large discrepancies in the literature. Our results suggest that irradiation-induced atomic displacements follow the same thermodynamic driving forces acting in thermal processes. The work also discloses a new method to investigate surface atoms’ behavior and promote microstructural modifications at room or lower temperatures.

Electron irradiation effects in edge-defined film-fed growth ribbon silicon

Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 287-290 ◽  
Author(s):  
A.E. Jaworowski ◽  
G.S. Oehrlein ◽  
J.W. Corbett
Keyword(s):  
Electron Irradiation ◽  
Irradiation Effects

In-situ electron irradiation studies of metal-carbon nanostructures

2008 ◽  
pp. 121-122
Author(s):  
L. Sun ◽  
Y. Gan ◽  
J. A. Rodriguez-Manzo ◽  
M. Terrones ◽  
A. V. Krasheninnikov ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Carbon Nanostructures
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