Spin Polarized Transport and Spin Relaxation in Quantum Wires

Author(s):  
Paul Wenk ◽  
Masayuki Yamamoto ◽  
Jun-ichiro Ohe ◽  
Tomi Ohtsuki ◽  
Bernhard Kramer ◽  
...  
SPIN ◽  
2014 ◽  
Vol 04 (03) ◽  
pp. 1450003
Author(s):  
AKSHAYKUMAR SALIMATH ◽  
BAHNIMAN GHOSH

In this paper, we employ semiclassical Monte Carlo approach to study spin polarized transport in InP and strained InP nanowires on GaAs substrate. Due to higher spin relaxation lengths, InP is being researched as suitable III–V material for spintronics related applications. Spin relaxation in InP channel is as a result of D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. We have considered injection polarization along z-direction and the magnitude of ensemble averaged spin variation is studied along the x-direction i.e., along transport direction. The effect of strain on various scattering rates and spin relaxation length is studied. We then present the effect of variation of nanowire width on spin relaxation length for the case of both strained and unstrained InP nanowire. The wire cross-section is varied between 4 × 4 nm2 and 10 × 10 nm2.


SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1250015 ◽  
Author(s):  
ASHUTOSH SHARMA ◽  
SWETALI NIMJE ◽  
AKSHAY SALIMATH ◽  
BAHNIMAN GHOSH

Spin relaxation process is simulated for nanowires and 2-D channels composed of II–VI DMS materials, particularly for Cd 1-x Mn x Te , in our work. Our studies are focused on analyzing spin relaxation behavior at T = 1 K. Variations in spin relaxation length with applied field and concentration of Mn doping are calculated and plotted. Effect of one-magnon scattering process is significant due to magnetic nature of the materials and is demonstrated in this work.


2007 ◽  
Vol 105 (1) ◽  
pp. 185-189 ◽  
Author(s):  
R. N. Gurzhi ◽  
A. N. Kalinenko ◽  
A. I. Kopeliovich ◽  
P. V. Pyshkin ◽  
A. V. Yanovsky

2014 ◽  
Vol 378 (43) ◽  
pp. 3189-3195 ◽  
Author(s):  
Shuai Li ◽  
Mao-Wang Lu ◽  
Ya-Qing Jiang ◽  
Sai-Yan Chen

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