Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience?

2003 ◽  
pp. 281-292
Author(s):  
N. N. Ledentsov
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Laser ◽  
Ge Quantum Dot

GaAs∕AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

2008 ◽  
Vol 93 (20) ◽  
pp. 203110 ◽  
Author(s):  
T. Mano ◽  
T. Kuroda ◽  
K. Mitsuishi ◽  
Y. Nakayama ◽  
T. Noda ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Droplet Epitaxy ◽  
Quantum Dot Laser

A passively mode-locked quantum-dot laser operating over a broad temperature range

2012 ◽  
Vol 101 (7) ◽  
pp. 071112 ◽  
Author(s):  
J. K. Mee ◽  
M. T. Crowley ◽  
N. Patel ◽  
D. Murrell ◽  
R. Raghunathan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Broad Temperature Range ◽  
Temperature Range ◽  
Quantum Dot Laser

1-μm- band transmission by use of a wavelength tunable quantum-dot laser over a hole-assisted fiber

2009 ◽  
Author(s):  
R. Katouf ◽  
N. Yamamoto ◽  
K. Akahane ◽  
T. Kawanishi ◽  
H. Sotobayashi
Keyword(s):  
Quantum Dot ◽  
Wavelength Tunable ◽  
Quantum Dot Laser

Opposite temperature effects of quantum-dot laser under dual-wavelength operation

2007 ◽  
Vol 90 (18) ◽  
pp. 181113 ◽  
Author(s):  
Hsueh-Shih Fan ◽  
Yi-Shin Su ◽  
Fei-Hung Chu ◽  
Fu-Yu Chang ◽  
Hao-Hsiung Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Effects ◽  
Dual Wavelength ◽  
Quantum Dot Laser

Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser

2014 ◽  
Vol 105 (4) ◽  
pp. 041112 ◽  
Author(s):  
R. Raghunathan ◽  
F. Grillot ◽  
J. K. Mee ◽  
D. Murrell ◽  
V. Kovanis ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Feedback ◽  
Quantum Dot Laser ◽  
Feedback Sensitivity

Quantum-dot laser with periodic pumping

1999 ◽  
Vol 60 (6) ◽  
pp. 4986-4995 ◽  
Author(s):  
Christian Wiele ◽  
Fritz Haake ◽  
Yuri M. Golubev
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Laser

Continuously tunable mode-spacing of a dual-mode external cavity InAs/InP quantum dot laser

2017 ◽  
Vol 56 (24) ◽  
pp. 6846 ◽  
Author(s):  
Hui-Hong Yuan ◽  
Feng Gao ◽  
Tao Yang
Keyword(s):  
Quantum Dot ◽  
External Cavity ◽  
Mode Spacing ◽  
Dual Mode ◽  
Quantum Dot Laser

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

A Low Repetition Rate All-Active Monolithic Passively Mode-Locked Quantum-Dot Laser

2011 ◽  
Vol 23 (14) ◽  
pp. 1019-1021 ◽  
Author(s):  
Yan Li ◽  
Magnus Breivik ◽  
Cheng-Yong Feng ◽  
Bjørn-Ove Fimland ◽  
Luke. F. Lester
Keyword(s):  
Quantum Dot ◽  
Repetition Rate ◽  
Quantum Dot Laser
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