gate voltage
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2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Lamessa Gudata ◽  
Jule Leta Tesfaye ◽  
Abela Saka ◽  
R. Shanmugam ◽  
L. Priyanka Dwarampudi ◽  
...  

The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.


2022 ◽  
Author(s):  
Jesús Iñarrea ◽  
Gloria Platero

Abstract We theoretically analyze the rise of photovoltage oscillations in hexagonal boron-nitride (h-BN) encapsulated monolayer graphene (h-BN/graphene/h-BN) when irradiated with terahertz radiation. We use an extension of the radiation-driven electron orbit model, successfully applied to study the oscillations obtained in irradiated magnetotransport of GaAs/AlGaAs heterostructures. The extension takes mainly into account that now the carriers are massive Dirac fermions. Our simulations reveal that the photovoltage in these graphene systems presents important oscillations similar to the ones of irradiated magnetoresistance in semiconductor platforms but in the terahertz range. We also obtain that these oscillations are clearly affected by the voltages applied to the sandwiched graphene: a vertical gate voltage between the two hBN layers and an external positive voltage applied to one of the sample sides. The former steers the carrier effective mass and the latter the photovoltage intensity and the oscillations amplitude. The frequency dependence of the photo-oscillations is also investigated.


Author(s):  
Julien Delahaye ◽  
Thierry Grenet

Abstract This paper describes the observation of non-equilibrium field effects at room temperature in four disordered insulating systems: granular Al, discontinuous Au, amorphous NbSi and amorphous InOx thin films. The use of wide enough gate voltage ranges and a cautious analysis of the data allow us to uncover memory dips, the advocated hallmark of the electron glass, in the four systems. These memory dips are found to relax slowly over days of measurements under gate voltage changes, reflecting the impossibility for the systems to reach an equilibrium state within experimentally accessible times. Our findings demonstrate that these electrical glassy effects, so far essentially reported at cryogenic temperatures, actually extend up to room temperature.


2022 ◽  
Author(s):  
Yaser Delir ghaleh joughi ◽  
Mostafa Sahrai

Abstract Utilizing the vortex beams, we investigate the entanglement between the triple-quantum dot molecule and its spontaneous emission field. We present the spatially dependent quantum dot-photon entanglement created by Laguerre-Gaussian (LG) fields. The degree of position-dependent entanglement (DEM) is controlled by the angular momentum of the LG light and the quantum tunneling effect created by the gate voltage. Various spatial-dependent entanglement distribution is reached just by the magnitude and the sign of the orbital angular momentum (OAM) of the optical vortex beam.


Author(s):  
E.А. Смирнова ◽  
И.А. Чепурная

For the first time, polymeric forms of the complexes N,N′-bis(salicylidene)ethylenediaminonickel(II) and N,N′-bis(3-methoxysalicylidene)ethylenediaminonickel(II) have been investigated as functional materials for the conducting channels of organic electrochemical transistors. The dependence of the electrical conductivity of the polymers on the electrolyte anion-doping level has been established. The polymer film conductivity versus gate voltage curve parameters have been shown to depend on the molecular structure of the complex and the nature of the electrolyte solvent.


Author(s):  
Ali Moulhim ◽  
Brijesh Tripathi ◽  
Manoj Kumar

Consider a single-electron transistor (SET) with a small size quantum dot (QD), where confined energy and the Coulomb interaction control the charges adding to QD. In this paper, a theoretical analysis of the relation between source-drain voltage and gate voltage has been done to define quantum-Coulomb blocked (and unblocked) diamonds for QD that has N electrons. An analytical equation for the conductance has been derived using the non-equilibrium Green function technique (NEGFT). Further, the effect of QD size and the tunnelling rate on conductance peaks and gaps have been investigated. Finally, the effect of gate voltage on conductance peaks and gaps with respect the quantum-Coulomb blocked regions has been analysed.


2D Materials ◽  
2021 ◽  
Author(s):  
Alessandro Grillo ◽  
Aniello Pelella ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Stephan Sleziona ◽  
...  

Abstract We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.


Author(s):  
Dr. Anup Kumar Biswas

The single-electron transistor (SET) attracts the researchers, scientists or technologists to design and construct large scale circuits for the sake of the consumption of ultra-low power and its small size. All the incidences in a SET-based circuit happen when only a single electron tunnels through the transistors under the proper applied bias voltage and a small gate voltage or multiple gate voltages. The oscillatory conduction as the function of the variable-multiple /single gate voltage is exhibited by SET. This uncommon characteristic provides the ability of executing the functions of AND, OR, XOR, Inverter and some combinational circuits like multiplexer, subtractor etc. For implementing a square root circuit, SET would be a best candidate to fulfil the requirements. The processing speed of SET based devices will be nearly close to electronic speed. Noise during processing gets ultra-low when the circuits is built with SETs. The square root circuit is presented here for sixteen bit input numbers. The input bit numbers can be increased with the increasing of the depth of the pattern very easily. And this will provide us the greater accuracy about the squared root value. Power consumption in the single electron circuit is low irrespective of bipolar junction transistor (BJT) or Complementary Metal Oxide Semiconductor (CMOS) circuits. Reducing the numbers of nodes, the power consumption is reduced.


Membranes ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 954
Author(s):  
Sungsik Lee

In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the measured transfer characteristics of a pair of TFTs where the channel layer is an amorphous In-Ga-Zn-O (IGZO) AOS, the gate voltage-dependent contact resistance is retrieved with a respective expression derived from the current–voltage relation, which follows a power law as a function of a gate voltage. This additionally allows the accurate extraction of intrinsic channel conductance, in which a disorder effect in the IGZO channel layer is embedded. From the intrinsic channel conductance, the characteristic energy of the band tail states, which represents the degree of channel disorder, can be deduced using the proposed modeling. Finally, the obtained results are also useful for development of an accurate compact TFT model, for which a gate bias-dependent contact resistance and disorder effects are essential.


2021 ◽  
Vol 2140 (1) ◽  
pp. 012006
Author(s):  
A G Duisenova ◽  
D M Sergeyev

Abstract In this work within the framework of the density functional theory and the method of nonequilibrium Green’s functions the dependences of the total energy of molecules C80-SET and (Sc3N)@C80 - SET on their total charge, the dependence of the total energy from the gate voltage and the stability diagram of the single-electron transistor have been determined. It is noted that for transition to switch to on mode (Sc3N)@C80-SET it is necessary to apply the gate voltage in the range from 0.019 ≤ VG ≤ 5.940 with the bias voltage -2.040 ≤ VSD ≤ 2.155 V. Considering that at values of bias voltage equal to –0.381 ≤ VSD ≤ 0.533 V there is no voltage on the substrate (VG = 0 V) and electric current does not flow. It is shown that the total energy at negative values of charge is higher than at positive charges and that the area of the Coulomb rhombus in fullerene with scandium nitride is 5.3 times larger than in “pure” fullerene.


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