Time-Resolved Raman Studies of Electron-Optical Phonon Interactions in GaAs-AlAs Multiple Quantum Well Structures

Author(s):  
K. T. Tsen ◽  
C. Chia ◽  
Keith R. Wald ◽  
Tobias Ruf ◽  
Peter Y. Yu ◽  
...  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

1989 ◽  
Vol 55 (8) ◽  
pp. 772-774 ◽  
Author(s):  
M. Capizzi ◽  
C. Coluzza ◽  
A. Frova ◽  
U. Cebulla ◽  
A. Forchel

1988 ◽  
Vol 61 (12) ◽  
pp. 1408-1411 ◽  
Author(s):  
Y. -H. Chang ◽  
B. D. McCombe ◽  
J. -M. Mercy ◽  
A. A. Reeder ◽  
J. Ralston ◽  
...  

2011 ◽  
Vol 109 (12) ◽  
pp. 124906 ◽  
Author(s):  
S. M. O’Malley ◽  
P. Revesz ◽  
A. Kazimirov ◽  
A. A. Sirenko

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