Green light-emitting diodes with InGaN/GaN multiple quantum well structures: Time-resolved photoluminescence, emission dynamics and related studies

Author(s):  
Zhe Chuan Feng ◽  
Xiaodong Jiang ◽  
Yueh-Chien Lee ◽  
Hao-Chung Kuo ◽  
Lingyu Wan
2012 ◽  
Vol 37 (12) ◽  
pp. 2205 ◽  
Author(s):  
Yi-An Chang ◽  
Yih-Ting Kuo ◽  
Jih-Yuan Chang ◽  
Yen-Kuang Kuo

Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


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