Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
1999 ◽
Vol 4
(1)
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The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.
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1994 ◽
Vol 30
(2)
◽
pp. 466-470
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