Helium Dilution as a Means to Obtain a Low Defect Density Hydrogenated Amorphous Silicon at High Deposition Rates in RF Glow-Discharge Systems

1991 ◽  
pp. 1083-1086 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
R. Vanderhaghen ◽  
Y. Bouizem ◽  
M. L. Thèye ◽  
D. Mencaraglia ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Rates ◽  
Rf Glow Discharge ◽  
Helium Dilution ◽  
Hydrogenated Amorphous

Influence of Deposition Conditions on Properties of Hydrogenated Amorphous Silicon Prepared by RF Glow Discharge

1985 ◽  
Vol 24 (Part 1, No. 6) ◽  
pp. 639-645 ◽  
Author(s):  
Satoshi Nishikawa ◽  
Hiroaki Kakinuma ◽  
Tsukasa Watanabe ◽  
Koji Nihei
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament

1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5743-5750 ◽  
Author(s):  
S. Chattopadhyay ◽  
Debabrata Das ◽  
S. N. Sharma ◽  
A K. Barua ◽  
Ratnabali Banerjee ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous ◽  
Heated Filament

Hydrogenated Amorphous Silicon Germanium Alloys Prepared by Triode rf Glow Discharge

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L276-L278 ◽  
Author(s):  
Takeshige Ichimura ◽  
Takurou Ihara ◽  
Toshio Hama ◽  
Michio Ohsawa ◽  
Hiroshi Sakai ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Glow Discharge ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Silicon Germanium Alloys

Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD at Deposition Rates up to 1 µm/minute

2000 ◽  
Vol 609 ◽  
Author(s):  
Brent P. Nelson ◽  
Yueqin Xu ◽  
A. Harv Mahan ◽  
D.L. Williamson ◽  
R.S. Crandal
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Conductivity Ratio ◽  
Hot Wire ◽  
Single Filament ◽  
Deposition Rates ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTWe grow hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor deposition (HWCVD) technique. In our standard tube-reactor we use a single filament, centered 5 cm below the substrate and obtain deposition rates up to 20 Å/s. However, by adding a second filament, and decreasing the filament-to-substrate distance, we are able to grow a-Si:H at deposition rates exceeding 167 Å/s (1 µm/min). We find the deposition rate increases with increasing deposition pressure, silane flow rate, and filament current and decreasing filament-tosubstrate distance. There are significant interactions among these parameters that require optimization to grow films of optimal quality for a desired deposition rate. Using our best conditions, we are able to maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 105 at deposition rates up to 130 Å/s, beyond which the conductivity ratio decreases. Other electronic properties decrease more rapidly with increasing deposition rate, including the ambipolar diffusion length, Urbach energy, and the as-grown defect density. Measurements of void density by small-angle X-ray scattering (SAXS) reveal an increase by well over an order of magnitude when going from one to two filaments. However, both Raman and X-ray diffraction (XRD) measurements show no change in film structure with increasing deposition rates up to 144 Å/s, and atomic force microscopy (AFM) reveals little change in topology.

Cowparison Studies of Hydrogenated Amorphous Silicon Films Prepared From Silane-Hydrogen and Silmne-Helium Mixtures

1986 ◽  
Vol 70 ◽  
Author(s):  
R. I. Patel ◽  
D. J. Olsen ◽  
J. R. Shirck ◽  
N. T. Tran
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Emission ◽  
Gas Mixtures ◽  
Silicon Films ◽  
Helium Mixtures ◽  
Rf Glow Discharge ◽  
Powder Formation ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon films were produced from silane/hydrogen and silane/helium gas mixtures by RF glow discharge. We examined the optical and electrical properties of films produced with these gas mixtures, at various RF power levels and silane fractions. Film quality was analyzed by measuring the dark and photoconductivity, optical band gap, and activation energy. Optical emission spectroscopy was also used as a diagnostic tool for studying the plasma during glow discharge depositions. Experimental results indicate that amorphous silicon films made from silane/helium mixtures exhibit improved optoelectronic properties, higher deposition rates, and higher emission intensity ratios (ISiH/IH) as compared to films produced from silane/hydrogen mixtures. In preparing films from silane/helium mixtures, the onset of dust/powder formation occurs at considerably higher RF powers as compared to silane/hydrogen, thus making this approach an attractive commercial option for depositing films at high rates.

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures

1984 ◽  
Vol 56 (6) ◽  
pp. 1812-1820 ◽  
Author(s):  
P. E. Vanier ◽  
F. J. Kampas ◽  
R. R. Corderman ◽  
G. Rajeswaran
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Glow Discharge ◽  
Hydrogen Mixtures ◽  
Hydrogenated Amorphous

Optical switching in hydrogenated amorphous silicon–sulfur alloy prepared by glow discharge

2004 ◽  
Vol 345-346 ◽  
pp. 302-305 ◽  
Author(s):  
S. Al-Dallal ◽  
F.Z. Henari ◽  
S.M. Al-Alawi ◽  
S.R. Arekat ◽  
H. Manaa
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

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