Inhomogeneous Internal Field Distribution in Planar Microwave Ferrite Devices

Author(s):  
M. Pardavi-Horvath ◽  
Guobao Zheng
Author(s):  
Jia Jie Wang ◽  
Thomas Wriedt ◽  
Yi Ping Han ◽  
Lutz Mädler ◽  
Yong Chang Jiao

1994 ◽  
Author(s):  
Makram Hage-Ali ◽  
M. C. Busch ◽  
Jean M. Koebel ◽  
Paul Siffert

1988 ◽  
Vol 153-155 ◽  
pp. 765-766 ◽  
Author(s):  
P. Birrer ◽  
F.N. Gygax ◽  
B. Hitti ◽  
E. Lippelt ◽  
A. Schenck ◽  
...  

1997 ◽  
Vol 488 ◽  
Author(s):  
C. Hochfilzer ◽  
T. Jost ◽  
A. Niko ◽  
W. Graupner ◽  
G. Leising ◽  
...  

AbstractDouble layer organic light emitting devices (OLED) are constructed by evaporating tris(8 -hydroxy) quinoline aluminum (Alq3) on a spin cast thin film of a methyl substituted ladder type poly -para -phenylene (m -LPPP). A thick layer of Mg:Ag is used as the cathode material. These organic materials are very suitable for application in OLEDs both, as transporting materials as well as active layers. Alq3 predominantly transports electrons while m - LPPP is a conjugated polymer having higher hole mobilities. Due to these transport properties the formation and radiative recombination of the excitons in ITO/m -LPPP/Alq3/Mg:Ag devices occur close to the m -LPPP/Alq3 interface. We compare the device performance of OLEDs with varying Alq3 layer thickness (0, 50, 150, 300, 500Å) and constant m -LPPP layer thickness (900Å). A difference in the device parameters and performance as a function of the Alq3 layer thickness is observed. We analyze these results with respect to the internal electric field distribution of the double layer devices derived from electroabsorption measurements.


2004 ◽  
Vol 70 (22) ◽  
Author(s):  
M. Angst ◽  
D. Di Castro ◽  
D. G. Eshchenko ◽  
R. Khasanov ◽  
S. Kohout ◽  
...  

2004 ◽  
Vol 64 (1) ◽  
pp. 39-45 ◽  
Author(s):  
J.L Sebastián ◽  
S Muñoz San Martı́n ◽  
M Sancho ◽  
J.M Miranda

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