Studies on the high-frequency properties of ?111?, ?110? and ?100? oriented GaAs IMPATT diodes

1993 ◽  
Vol 56 (4) ◽  
pp. 375-380 ◽  
Author(s):  
S. P. Pati ◽  
R. Mukherjee ◽  
J. P. Banerjee ◽  
S. K. Roy
Keyword(s):  
High Frequency ◽  
Frequency Properties ◽  
Impatt Diodes

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

2020 ◽  
Vol 10 (4) ◽  
pp. 501-506
Author(s):  
Monisha Ghosh ◽  
Arindam Biswas ◽  
Aritra Acharyya
Keyword(s):  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Rf Power ◽  
Drift Diffusion ◽  
Frequency Bands ◽  
Atmospheric Window ◽  
Lower Noise ◽  
Impatt Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

Improving high-frequency properties via selectable diameter of amorphous-ferroalloy particle

2014 ◽  
Vol 185 ◽  
pp. 21-25 ◽  
Author(s):  
M. Zeng ◽  
X.X. Zhang ◽  
R.H. Yu ◽  
D.L. Zhao ◽  
Y.H. Zhang ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Properties
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