Monitoring Parameters for Optimization of Power & Efficiency and Minimization of Noise in High Frequency IMPATT Diodes

2014 ◽  
pp. 163-167
Author(s):  
S. P. Pati ◽  
P. R. Tripathy
Keyword(s):  
High Frequency ◽  
Power Efficiency ◽  
Impatt Diodes

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

2020 ◽  
Vol 10 (4) ◽  
pp. 501-506
Author(s):  
Monisha Ghosh ◽  
Arindam Biswas ◽  
Aritra Acharyya
Keyword(s):  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Rf Power ◽  
Drift Diffusion ◽  
Frequency Bands ◽  
Atmospheric Window ◽  
Lower Noise ◽  
Impatt Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

scholarly journals A Fractional-Order Element (FOE)-Based Approach to Wireless Power Transmission for Frequency Reduction and Output Power Quality Improvement

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1029 ◽  
Author(s):  
Guidong Zhang ◽  
Zuhong Ou ◽  
Lili Qu
Keyword(s):  
Fractional Order ◽  
High Frequency ◽  
Power Efficiency ◽  
Power Transmission ◽  
Switching Frequency ◽  
Wireless Power ◽  
Wireless Power Transmission ◽  
High Switching Frequency ◽  
Power Quality Improvement ◽  
Power Inductors

A wireless power transmission (WPT) requires high switching frequency to achieve energy transmission; however, existing switching devices cannot satisfy the requirements of high-frequency switching, and the efficiency of current WPT is too low. Compared with the traditional power inductors and capacitors, fractional-order elements (FOEs) in WPT can realize necessary functions though requiring a lower switching frequency, which leads to a more favorable high-frequency switching performance with a higher efficiency. In this study, a generalized fractional-order WPT (FO-WPT) is established, followed by a comprehensive analysis on its WPT performance and power efficiency. Through extensive simulations of typical FO wireless power domino-resonators (FO-WPDRS), the functionality of the proposed FO-WPT for medium and long-range WPT is demonstrated. The numerical results show that the proposed FOE-based WPT solution has a higher power efficiency and lower switching frequency than conventional methods.

Studies on the high-frequency properties of ?111?, ?110? and ?100? oriented GaAs IMPATT diodes

1993 ◽  
Vol 56 (4) ◽  
pp. 375-380 ◽  
Author(s):  
S. P. Pati ◽  
R. Mukherjee ◽  
J. P. Banerjee ◽  
S. K. Roy
Keyword(s):  
High Frequency ◽  
Frequency Properties ◽  
Impatt Diodes

scholarly journals Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

2020 ◽  
Vol 184 ◽  
pp. 01012
Author(s):  
Sai Kiran Pullabhatla ◽  
Phaneendra Babu Bobba ◽  
Satyavani Yadlapalli
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Frequency ◽  
Power Efficiency ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Electronic Systems ◽  
High Electron ◽  
Power Semiconductor ◽  
Efficient Power

Power semiconductor devices plays a major role in efficient power conversion. As we have Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices, GaN technologies are ideal for working in high frequency power electronic systems (in MHz). Because the GaN has superior electron mobility and bandgap than the SiC and Si it has superior characteristics like low conduction losses, high switching rate so that there is better power efficiency than SiC, Si based inverter. Here we are using the Gan based High-Electron-Mobility Transistor (HEMT) and SiC and Si based mosfet in the inverter. The proposed inverter of different topologies is designed to transfer the power at >1MHz range. Comparison of the three different switches is done by the output power and the efficiency of the inverter. This paper presents the SPICE simulation results of the class d and class e inverter of output power 1KW.

scholarly journals Self-switching diodes as RF rectifiers: evaluation methods and current progress

2019 ◽  
Vol 8 (2) ◽  
pp. 396-404 ◽  
Author(s):  
Nor Farhani Zakaria ◽  
Shahrir Rizal Kasjoo ◽  
Muammar Mohamad Isa ◽  
Zarimawaty Zailan ◽  
Mohd Khairuddin Md Arshad ◽  
...  
Keyword(s):  
Internet Of Things ◽  
High Frequency ◽  
Power Efficiency ◽  
Wireless Transmission ◽  
The Internet ◽  
Power Devices ◽  
New Paradigm ◽  
Iot Applications ◽  
Design Simplicity ◽  
The Internet Of Things

In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.

High-frequency and power-efficiency ultrasound beam-forming processor for handheld applications

2014 ◽  
Author(s):  
Guo-Zua Wu ◽  
Song-Nien Tang ◽  
Chih-Chi Chang ◽  
Chien-Ju Lee ◽  
Kuan-Hsien Lin ◽  
...  
Keyword(s):  
High Frequency ◽  
Power Efficiency ◽  
Beam Forming ◽  
Ultrasound Beam
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