InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy
1987 ◽
Vol 6
(4)
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pp. 331-345
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1999 ◽
Vol 203
(4)
◽
pp. 481-485
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1999 ◽
Vol 204
(4)
◽
pp. 429-433
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