International Conference on Indium Phosphide and Related Materials, 2005.
Latest Publications

TOTAL DOCUMENTS

190

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780388917

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Electrodeposited Pt/InP Schottky barriers with large barrier heights and large hydrogen sensitivity for sensor chips using InP-based uantum wire networks [uantum read quantum]

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517551 ◽

2005 ◽

Author(s):

T. Kimura ◽

T. Sato ◽

T. Hashizume ◽

H. Hasegawa

Keyword(s):

Schottky Barriers ◽

Barrier Heights

Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As/sub 2/ source using molecular beam epitaxy

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517416 ◽

2005 ◽

Author(s):

T. Amano ◽

T. Sugaya ◽

K. Komori

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Inas Quantum Dots ◽

Gradient Composition

Emission tuning from a fiber-coupled GalnNAs VCSEL

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517482 ◽

2005 ◽

Author(s):

N. Laurand ◽

S. Calvez ◽

M.D. Dawson ◽

T. Jouhti ◽

J. Konttinen ◽

...

Development of 1550 nm bipolar cascade lasers

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517484 ◽

2005 ◽

Author(s):

Z.A. Shellenbarger ◽

V.B. Khalfin ◽

H. An ◽

J.H. Abeles

Keyword(s):

Bipolar Cascade Lasers ◽

Cascade Lasers ◽

Bipolar Cascade

N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517469 ◽

2005 ◽

Author(s):

N.C. Paul ◽

M. Takebe ◽

M. Tametou ◽

H. Seto ◽

Y. Fujino ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

DC and AC characteristics of HBTs with different base width

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517452 ◽

2005 ◽

Author(s):

Che-ming Wang ◽

Yue-ming Hsin

Keyword(s):

Base Width

Experimental and theoretical characteristics of sub-THz and THz oscillation of resonant tunneling diode integrated with slot antenna

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517407 ◽

2005 ◽

Cited By ~ 1

Author(s):

M. Asada ◽

N. Orihashi ◽

S. Hattori ◽

S. Suzuki

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

Slot Antenna ◽

Tunneling Diode

Long-period grating loaded semiconductor separate confinement heterostructure (SCH) waveguide for polarization-independent gain equalizing devices

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517560 ◽

2005 ◽

Author(s):

T. Abe ◽

H. Tabuchi ◽

K. Terada ◽

K. Utaka

Keyword(s):

Long Period Grating ◽

Long Period ◽

Polarization Independent

75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517570 ◽

2005 ◽

Author(s):

E. Cohen ◽

Y. Betser ◽

B. Sheinman ◽

S. Cohen ◽

V. Sidorov ◽

...

Keyword(s):

Low Power ◽

Power Dissipation ◽

Figures Of Merit ◽

Distributed Amplifier ◽

Low Power Dissipation

Micro-photoreflectance spectroscopy investigation of InGaAlAs/GaAsSb/InP heterojunction bipolar transistors

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517456 ◽

2005 ◽

Author(s):

H. Chouaib ◽

A. Bakouboula ◽

T. Benyattou ◽

C. Bru-Chevallier ◽

H. Lahreche ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Photoreflectance Spectroscopy

International Conference on Indium Phosphide and Related Materials, 2005.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electrodeposited Pt/InP Schottky barriers with large barrier heights and large hydrogen sensitivity for sensor chips using InP-based uantum wire networks [uantum read quantum]

Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As/sub 2/ source using molecular beam epitaxy

Emission tuning from a fiber-coupled GalnNAs VCSEL

Development of 1550 nm bipolar cascade lasers

N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

DC and AC characteristics of HBTs with different base width

Experimental and theoretical characteristics of sub-THz and THz oscillation of resonant tunneling diode integrated with slot antenna

Long-period grating loaded semiconductor separate confinement heterostructure (SCH) waveguide for polarization-independent gain equalizing devices

75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications

Micro-photoreflectance spectroscopy investigation of InGaAlAs/GaAsSb/InP heterojunction bipolar transistors

International Conference on Indium Phosphide and Related Materials, 2005.
Latest Publications