selective area
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Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 253
Author(s):  
Vladimir G. Dubrovskii

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.


2021 ◽  
Vol 119 (26) ◽  
pp. 262104
Author(s):  
Lian Zhang ◽  
Zhe Cheng ◽  
Yawei He ◽  
Jianxing Xu ◽  
Lifang Jia ◽  
...  

2021 ◽  
Author(s):  
Qi-Liang Wang ◽  
Shi-Yang Fu ◽  
Si-Han He ◽  
Hai-Bo Zhang ◽  
Shao-Heng Cheng ◽  
...  

Abstract n-GaOx thin film is deposited on the single crystal boron doped diamond through RF magnetron sputtering to form a pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured by using X-ray photoelectron spectroscopy to evaluate the heterojunction property. The GaOx/diamond heterojunction shows a type-II staggered band configuration with the valence and conduction band offsets are of 1.28 eV and 1.93 eV, respectively. Those results confirm the feasibility to use n-GaOx as termination structure for diamond power device.


2021 ◽  
Author(s):  
Alexandre Bucamp ◽  
Christophe Coinon ◽  
Sylvie Lepilliet ◽  
David Troadec ◽  
Gilles Patriarche ◽  
...  

Abstract In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core / Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.


Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7771
Author(s):  
Barbora Křivská ◽  
Michaela Šlapáková ◽  
Jozef Veselý ◽  
Martin Kihoulou ◽  
Klaudia Fekete ◽  
...  

Aluminium steel clad materials have high potential for industrial applications. Their mechanical properties are governed by an intermetallic layer, which forms upon heat treatment at the Al-Fe interface. Transmission electron microscopy was employed to identify the phases present at the interface by selective area electron diffraction and energy dispersive spectroscopy. Three phases were identified: orthorhombic Al5Fe2, monoclinic Al13Fe4 and cubic Al19Fe4MnSi2. An effective interdiffusion coefficient dependent on concentration was determined according to the Boltzmann–Matano method. The highest value of the interdiffusion coefficient was reached at the composition of the intermetallic phases. Afterwards, the process of diffusion considering the evaluated interdiffusion coefficient was simulated using the finite element method. Results of the simulations revealed that growth of the intermetallic phases proceeds preferentially in the direction of aluminium.


2021 ◽  
Author(s):  
Hao Lu ◽  
Xiaohua Ma ◽  
Bin Hou ◽  
Ling Yang ◽  
Teng Huo ◽  
...  

Author(s):  
Michael F. Mazza ◽  
Miguel Cabán-Acevedo ◽  
Harold J. Fu ◽  
Madeline C. Meier ◽  
Annelise C. Thompson ◽  
...  

Nano Research ◽  
2021 ◽  
Author(s):  
Zahra Azimi ◽  
Aswani Gopakumar ◽  
Amira S. Ameruddin ◽  
Li Li ◽  
Thien Truong ◽  
...  

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