Optical and structural properties of Pr:GGG crystalline thin film waveguides grown by pulsed-laser deposition

2005 ◽  
Vol 81 (7) ◽  
pp. 1477-1483 ◽  
Author(s):  
J. Lancok ◽  
C. Garapon ◽  
M. Jelinek ◽  
J. Mugnier ◽  
R. Brenier
2000 ◽  
Vol 76 (18) ◽  
pp. 2490-2492 ◽  
Author(s):  
P. A. Atanasov ◽  
R. I. Tomov ◽  
J. Perriére ◽  
R. W. Eason ◽  
N. Vainos ◽  
...  

2004 ◽  
Vol 453-454 ◽  
pp. 417-421 ◽  
Author(s):  
A. Roemer ◽  
A. Essahlaoui ◽  
O. Pons-Y-Moll ◽  
B. Vincent ◽  
R.M. Defourneau ◽  
...  

2006 ◽  
Vol 100 (3) ◽  
pp. 033507 ◽  
Author(s):  
W. C. Liu ◽  
C. L. Mak ◽  
K. H. Wong ◽  
D. Y. Wang ◽  
H. L. W. Chan

2009 ◽  
Vol 55 (6(1)) ◽  
pp. 2685-2688 ◽  
Author(s):  
Hee Jae Kang ◽  
Kwang Ho Park ◽  
Young Yeal Song ◽  
Eun Kyung Lee ◽  
Lee Seol Son ◽  
...  

2009 ◽  
Vol 106 (7) ◽  
pp. 073523 ◽  
Author(s):  
W. C. Liu ◽  
Y. B. Yao ◽  
C. Y. Lam ◽  
C. S. Ng ◽  
C. L. Mak ◽  
...  

2003 ◽  
Vol 764 ◽  
Author(s):  
Hong Seong Kang ◽  
Jeong Seok Kang ◽  
Jae Won Kim ◽  
Sang Yeol Lee

AbstractZnO thin films and ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300°C in oxygen ambient pressure. The optical and structural properties changed by Si layer in ZnO thin film. UV and visible peak position was shifted by Si layer. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. The optical and structural properties of ZnO thin films and ZnOSi-ZnO multi-layer thin films were characterized by PL (Photoluminescence) and XRD(X-ray diffraction method), respectively. Electrical properties were measured by van der Pauw Hall measurements.


2006 ◽  
Vol 17 (2-4) ◽  
pp. 591-595 ◽  
Author(s):  
Ji-Won Son ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Lambertus Hesselink

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