zno thin film
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2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  

2021 ◽  
Author(s):  
Ümit Doğan ◽  
Fahrettin Sarcan ◽  
Kamuran Kara Koç ◽  
Furkan Kuruoğlu ◽  
Ayşe Erol

Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.


2021 ◽  
Vol 30 (4) ◽  
pp. 32-38
Author(s):  
Tharaa Sony ◽  
Thoalfiqar Zaker ◽  
Ammar Zakar ◽  
Hala Mohammed

2021 ◽  
Vol 186 ◽  
pp. 108178
Author(s):  
Arqum Ali ◽  
Jewel Kumer Saha ◽  
Abu Bakar Siddik ◽  
Md Mobaidul Islam ◽  
Jin Jang

2021 ◽  
Vol 122 ◽  
pp. 111742
Author(s):  
A. Ayana ◽  
Parutagouda Shankaragouda Patil ◽  
Neelamma B. Gummagol ◽  
U.K. Goutam ◽  
Pankaj Sharma ◽  
...  

2021 ◽  

<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>


2021 ◽  
pp. 102972
Author(s):  
Vishnu V. Kutwade ◽  
Ketan P. Gattu ◽  
Makrand E. Sonawane ◽  
Dipak A. Tonpe ◽  
Ibrahim M.S. Mohammed ◽  
...  

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