scholarly journals Deposition of mass-selected cluster ions using a pulsed arc cluster-ion source

2001 ◽  
Vol 73 (5) ◽  
pp. 547-554 ◽  
Author(s):  
B. Klipp ◽  
M. Grass ◽  
J. Müller ◽  
D. Stolcic ◽  
U. Lutz ◽  
...  
1996 ◽  
Vol 235-238 ◽  
pp. 267-272 ◽  
Author(s):  
E. Barborini ◽  
P. Piseri ◽  
P. Milani ◽  
Salvatore Iannotta

1993 ◽  
Vol 90 (2) ◽  
pp. 201-206 ◽  
Author(s):  
H. R. Siekmann ◽  
E. Holub-Krappe ◽  
Bu. Wrenger ◽  
Ch. Pettenkofer ◽  
K. H. Meiwes-Broer

2001 ◽  
Vol 17 (1) ◽  
pp. 37-41 ◽  
Author(s):  
N. Blessing ◽  
S. Burkart ◽  
G. Ganteför

1991 ◽  
Vol 20 (1-4) ◽  
pp. 417-420 ◽  
Author(s):  
H. R. Siekmann ◽  
Ch. L�der ◽  
J. Faehrmann ◽  
H. O. Lutz ◽  
K. H. Meiwes-Broer

1995 ◽  
Vol 400 ◽  
Author(s):  
P. Piseri ◽  
E. Barborini ◽  
P. Milani

AbstractWe have produced metal clusters with a molecular beam apparatus based on a Pulsed Arc Cluster Ion Source. The source has been optimized in order to generate intense and stable cluster beams of various elements, with a mass distribution ranging from the monomer up to several thousands of atoms. The source operation conditions can be varied in order to control the mass distribution, intensity and velocity of the aggregates. Preliminary results on the synthesis of granular thin films with this technique are also presented.


1998 ◽  
Vol 3 (2) ◽  
pp. 179-182 ◽  
Author(s):  
K. Seeger ◽  
L. K�ller ◽  
J. Tiggesb�umker ◽  
K.-H. Meiwes-Broer

1996 ◽  
Vol 104 (17) ◽  
pp. 6577-6581 ◽  
Author(s):  
Wenyun Lu ◽  
Rongbin Huang ◽  
Junqi Ding ◽  
Shihe Yang

Author(s):  
H. R. Siekmann ◽  
Ch. Lüder ◽  
J. Faehrmann ◽  
H. O. Lutz ◽  
K. H. Meiwes-Broer

1990 ◽  
Vol 165 (4) ◽  
pp. 293-296 ◽  
Author(s):  
G. Ganteför ◽  
H.R. Siekmann ◽  
H.O. Lutz ◽  
K.H. Meiwes-Broer

1990 ◽  
Vol 206 ◽  
Author(s):  
Hellmut Haberland ◽  
Martin Karrais ◽  
Martin Mall

ABSTRACTAtoms are gas discharge sputtered from a solid target. They are condensed to form clusters using the gas aggregation technique. An intense beam of clusters of all solid materials can be obtained. Up to 80 % of the clusters can be ionised without using additional electron impact ionisation. Total deposition rates vary between 1 and 1000 Å per second depending on cluster diameter, which can be varied between 3 and 500 nm. Thin films of Al, Cu, and Mo have been produced so far. For non accelerated beams a weakly adhering mostly coulored deposit is obtained. Accelerating the cluster ions this changes to a strongly adhering film, having a shiny metallic appearance, and a very sharp and plane surface as seen in an electron microscope. The advantages compared to Kyoto ICB-method are: easy control of the cluster size, no electron impact ionisation, high degree of ionisation, and sputtering is used instead of thermal evaporation, which allows the use of high melting point materials.


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