Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity

2021 ◽  
Author(s):  
Soumava Ghosh ◽  
Anirban Bhattacharyya ◽  
Gopa Sen ◽  
Bratati Mukhopadhyay
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Structural Parameters ◽  
Infrared Photodetectors ◽  
High Responsivity ◽  
Quantum Well Infrared Photodetectors

scholarly journals Modeling of dark current in mid-infrared quantum-well infrared photodetectors

2009 ◽  
Vol 52 (6) ◽  
pp. 220-223 ◽  
Author(s):  
Fabrizio Castellano ◽  
Rita C. Iotti ◽  
Fausto Rossi ◽  
Jerome Faist ◽  
Emmanuel Lhuillier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
Quantum Well Infrared Photodetectors

Dark current in quantum well infrared photodetectors

1993 ◽  
Vol 73 (4) ◽  
pp. 2029-2031 ◽  
Author(s):  
H. C. Liu ◽  
A. G. Steele ◽  
M. Buchanan ◽  
Z. R. Wasilewski
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

The dark current caused by the field-induced mixing effect on bound-to-continuum quantum-well infrared photodetectors

1999 ◽  
Vol 33 (2) ◽  
pp. 162-169
Author(s):  
Kwok-Keung Chong ◽  
Mau-Phon Houng ◽  
Yeong-Her Wang ◽  
Chang-Hsing Chu ◽  
Chen-I Hung
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Mixing Effect ◽  
Quantum Well Infrared Photodetectors

GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

1990 ◽  
Vol 216 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
B. F. Levine ◽  
S. J. Pearton ◽  
V. Swaminathan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrochemical Capacitance ◽  
Double Crystal ◽  
X Ray ◽  
Quantum Well Infrared Photodetectors ◽  
Capacitance Voltage

ABSTRACTWe have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

scholarly journals Study of the dark current in very long wavelength quantum well infrared photodetectors

2007 ◽  
Vol 56 (9) ◽  
pp. 5424
Author(s):  
Xiong Da-Yuan ◽  
Li Ning ◽  
Xu Wen-Lan ◽  
Zhen Hong-Lou ◽  
Li Zhi-Feng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors
Sign in / Sign up

Export Citation Format

Share Document