GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

1990 ◽  
Vol 216 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
B. F. Levine ◽  
S. J. Pearton ◽  
V. Swaminathan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrochemical Capacitance ◽  
Double Crystal ◽  
X Ray ◽  
Quantum Well Infrared Photodetectors ◽  
Capacitance Voltage

ABSTRACTWe have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

scholarly journals Modeling of dark current in mid-infrared quantum-well infrared photodetectors

2009 ◽  
Vol 52 (6) ◽  
pp. 220-223 ◽  
Author(s):  
Fabrizio Castellano ◽  
Rita C. Iotti ◽  
Fausto Rossi ◽  
Jerome Faist ◽  
Emmanuel Lhuillier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
Quantum Well Infrared Photodetectors

Dark current in quantum well infrared photodetectors

1993 ◽  
Vol 73 (4) ◽  
pp. 2029-2031 ◽  
Author(s):  
H. C. Liu ◽  
A. G. Steele ◽  
M. Buchanan ◽  
Z. R. Wasilewski
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

The dark current caused by the field-induced mixing effect on bound-to-continuum quantum-well infrared photodetectors

1999 ◽  
Vol 33 (2) ◽  
pp. 162-169
Author(s):  
Kwok-Keung Chong ◽  
Mau-Phon Houng ◽  
Yeong-Her Wang ◽  
Chang-Hsing Chu ◽  
Chen-I Hung
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Mixing Effect ◽  
Quantum Well Infrared Photodetectors

Characteristics of Sulfur in OMVPE Grown Indium Phosphide

1990 ◽  
Vol 204 ◽  
Author(s):  
S.D. Tyagi ◽  
H. Ehsani ◽  
S.K. Ghandhi
Keyword(s):  
Hydrogen Sulfide ◽  
Indium Phosphide ◽  
Carrier Concentration ◽  
Rapid Decrease ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Linear Region ◽  
Double Crystal ◽  
X Ray ◽  
Partial Pressures

ABSTRACTDoping of indium phosphide, grown by organometallic vapor phase epitaxy (OMVPE), has been carried out using hydrogen sulfide. For low partial pressures of H2S, the carrier concentration in the epitaxial layers is found to increase linearly. However, for higher partial pressures a region of superlinear doping is seen. For still higher partial pressures, a rapid decrease in carrier concentration is seen. In the linear region, the doping has a weak dependence on phosphine pressure, however, peak carrier concentration is higher for lower phosphine pressures.The layers were studied using Hall Effect and Double Crystal X-Ray Diffraction, in order to elucidate the nature of impurities and compensating centers introduced. A model which explains the above characteristics is proposed for S incorporation in MOVPE grown InP.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

scholarly journals Study of the dark current in very long wavelength quantum well infrared photodetectors

2007 ◽  
Vol 56 (9) ◽  
pp. 5424
Author(s):  
Xiong Da-Yuan ◽  
Li Ning ◽  
Xu Wen-Lan ◽  
Zhen Hong-Lou ◽  
Li Zhi-Feng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors
Sign in / Sign up

Export Citation Format

Share Document