Analysis of different vacuum annealing levels for ZnSe thin films as potential buffer layer for solar cells

Author(s):  
Gaurav Chasta ◽  
Himanshu ◽  
S. L. Patel ◽  
S. Chander ◽  
M. D. Kannan ◽  
...  
2020 ◽  
Vol 117 ◽  
pp. 113845 ◽  
Author(s):  
S. Chuhadiya ◽  
R. Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  

2000 ◽  
Vol 361-362 ◽  
pp. 172-176 ◽  
Author(s):  
A. Rumberg ◽  
Ch. Sommerhalter ◽  
M. Toplak ◽  
A. Jäger-Waldau ◽  
M.Ch. Lux-Steiner

2020 ◽  
Vol 384 (4) ◽  
pp. 126097 ◽  
Author(s):  
Ritika Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
M.D. Kannan ◽  
...  

2009 ◽  
Vol 255 (13-14) ◽  
pp. 6615-6619 ◽  
Author(s):  
Y. Lare ◽  
A. Godoy ◽  
L. Cattin ◽  
K. Jondo ◽  
T. Abachi ◽  
...  

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).


2019 ◽  
Author(s):  
P. S. Stumph ◽  
K. A. Baranova ◽  
M. S. Rogovoy ◽  
V. V. Bunakov ◽  
E. V. Maraeva ◽  
...  

2020 ◽  
Vol 20 (6) ◽  
pp. 3703-3709 ◽  
Author(s):  
S. S. Rawat ◽  
Ashish Kumar ◽  
R. Srivastava ◽  
C. K. Suman

Cobalt phthalocyanine (CoPc) nano thin films have been introduced as a hole buffer layer in organic solar cells with active layer of Poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The surface morphology and opto-electrical properties of the CoPc thin films have made it an applicable materials for organic solar cells. The nano-thin films of CoPc are continuously distributed over the studied area and the roughness are around 5 to 7 nm for all thickness. The dominant optical absorptions are in the visible range of wavelengths 500 to 800 nm. The CoPc buffer layer is suitable for energy level matching in energy level diagram and enhances the absorption spectrum as well, which facilitate the charge carrier generation, increases charge transport, decreases charge recombination, hence enhance the all device parameters short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF). The solar cells efficiency increases by ˜70% and the fill factor increases by ˜45% in comparison to the standard cells. The increase in efficiency and the fill factors of the solar cells may also be attributed to the increasing of shunt and lowering the series resistance of the cells. The cole–cole plots of the devices may be modeled in electrical circuit as a single parallel resistance Rb and capacitance Cb network with a series resistance Rc.


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