The Electronic and Magnetic Properties of Half-metal Type MnFe x Co2−x Si (with x=0, 0.25, 0.5, 0.75 ,1, 1.25, 1.5, 1.75, and 2) Alloys

2010 ◽  
Vol 24 (1-2) ◽  
pp. 887-893 ◽  
Author(s):  
Z. Nourbakhsh
2004 ◽  
Vol 85 (20) ◽  
pp. 4684-4686 ◽  
Author(s):  
K. Kobayashi ◽  
R. Y. Umetsu ◽  
R. Kainuma ◽  
K. Ishida ◽  
T. Oyamada ◽  
...  

2018 ◽  
Vol 96 (1) ◽  
pp. 30-35
Author(s):  
Xiu-Juan Du ◽  
Zheng-Wei Zhang ◽  
Yu-Ling Song

Using first-principle calculations based on density functional theory, we investigate the strain and different edge terminations modulated electronic and magnetic properties of armchair AlN/SiC nanoribbons. The results show that the edge terminations Fe, Co, Cl can decrease or even eliminate the edge deformation of AlN/SiC nanoribbon. The magnetism of the nanoribbons is greatly adjusted by magnetic atoms Fe and Co, but not by Cl atoms. Apart from the nanoribbon with Cl terminations, the magnetism of the residual nanoribbons can be adjusted by increasing the compressed or stretched strain. The magnetic semiconductor nanoribbon with Co terminations becomes a magnetic half-metal system and then becomes a magnetic metal system, with the increase of the compressed strain. The magnetism of the nanoribbon with dangling bonds is attributed to the SiC edge and its nearest-neighbour C atoms, whereas the magnetism of the nanoribbon with Fe (or Co) terminations is mainly contributed by Fe (or Co) terminations.


2015 ◽  
Vol 17 (16) ◽  
pp. 10919-10924 ◽  
Author(s):  
W. X. Zhang ◽  
T. Li ◽  
S. B. Gong ◽  
C. He ◽  
L. Duan

Semiconductor → half-metal → metal transition with nonmagnetic → magnetic transfer can be achieved for AlN nanosheets by surface hydrogenation and increasing nanosheet thickness.


2004 ◽  
Vol 84 (2) ◽  
pp. 239-241 ◽  
Author(s):  
C. Y. Fong ◽  
M. C. Qian ◽  
J. E. Pask ◽  
L. H. Yang ◽  
S. Dag

Author(s):  
Dan Jin ◽  
Meimei Shi ◽  
Pan Li ◽  
Huiyan Zhao ◽  
Man Shen ◽  
...  

The ferromagnetic tVS2/hVS2 heterostructure is the ground state under normal conditions or biaxial strains. The tVS2/hVS2 heterostructure can be switched from a gapless semiconductor to a metal or a half-metal under biaxial or uniaxial strains.


2005 ◽  
Vol 399 (1-2) ◽  
pp. 60-63 ◽  
Author(s):  
K. Kobayashi ◽  
R.Y. Umetsu ◽  
A. Fujita ◽  
K. Oikawa ◽  
R. Kainuma ◽  
...  

2004 ◽  
Vol 85 (11) ◽  
pp. 2011-2013 ◽  
Author(s):  
R. Y. Umetsu ◽  
K. Kobayashi ◽  
R. Kainuma ◽  
A. Fujita ◽  
K. Fukamichi ◽  
...  

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