Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission

2012 ◽  
Vol 45 (2) ◽  
pp. 127-134 ◽  
Author(s):  
Baile Chen ◽  
A. L. Holmes
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Infrared Emission ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

2009 ◽  
Vol 2 (12) ◽  
pp. 126505 ◽  
Author(s):  
Marcin Motyka ◽  
Grzegorz Sęk ◽  
Jan Misiewicz ◽  
Adam Bauer ◽  
Matthias Dallner ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

Electrically-pumped VCSELs using type-II quantum wells for the mid-infrared

2018 ◽  
Author(s):  
Markus-Christian Amann ◽  
Ganpath Kumar Veerabathran ◽  
Stephan Sprengel ◽  
Alexander Andrejew
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Electrically Pumped ◽  
Type Ii Quantum Wells

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

2011 ◽  
Vol 19 (2) ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Gas Sensing ◽  
Infrared Emission ◽  
Infrared Range ◽  
Type Ii ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Gasb Layer ◽  
Resonant States

AbstractModulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

2018 ◽  
Vol 35 (5) ◽  
pp. 057801
Author(s):  
Chang Wang ◽  
Wenwu Pan ◽  
Konstantin Kolokolov ◽  
Shumin Wang
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Type Ii ◽  
Type Ii Quantum Wells
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