scholarly journals Number-resolved master equation approach to quantum transport under the self-consistent Born approximation

2013 ◽  
Vol 56 (10) ◽  
pp. 1866-1873 ◽  
Author(s):  
Yu Liu ◽  
JinShuang Jin ◽  
Jun Li ◽  
XinQi Li ◽  
YiJing Yan
Keyword(s):  
Master Equation ◽  
Quantum Transport ◽  
Born Approximation ◽  
The Self ◽  
Equation Approach ◽  
Self Consistent ◽  
Master Equation Approach

scholarly journals Geometrical pumping in quantum transport: Quantum master equation approach

2012 ◽  
Vol 86 (23) ◽  
Author(s):  
Tatsuro Yuge ◽  
Takahiro Sagawa ◽  
Ayumu Sugita ◽  
Hisao Hayakawa
Keyword(s):  
Master Equation ◽  
Quantum Transport ◽  
Quantum Master Equation ◽  
Equation Approach ◽  
Master Equation Approach

scholarly journals Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 21-25 ◽  
Author(s):  
Dragica Vasileska ◽  
Terry Eldridge ◽  
Paolo Bordone ◽  
David K. Ferry
Keyword(s):  
Quantum Transport ◽  
Born Approximation ◽  
Inversion Layer ◽  
The Self ◽  
Charge Densities ◽  
Self Energy ◽  
Self Consistent ◽  
Inversion Charge ◽  
Simulation Results ◽  
Subband Structure

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

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