scholarly journals Internal displacement reactions in multicomponent oxides. Part I. Line compounds with narrow homogeneity range

2005 ◽  
Vol 36 (10) ◽  
pp. 2685-2694 ◽  
Author(s):  
S. N. S. Reddy ◽  
L. B. Wiggins ◽  
D. N. Leonard ◽  
K. T. Jacob
Keyword(s):  
Homogeneity Range ◽  
Internal Displacement ◽  
Narrow Homogeneity Range ◽  
Displacement Reactions ◽  
Multicomponent Oxides

Growth of Phases with Narrow Homogeneity Range and Line Compounds by Interdiffusion

2014 ◽  
pp. 299-336
Author(s):  
Aloke Paul ◽  
Tomi Laurila ◽  
Vesa Vuorinen ◽  
Sergiy V. Divinski
Keyword(s):  
Homogeneity Range ◽  
Narrow Homogeneity Range

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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