Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

2006 ◽  
Vol 35 (4) ◽  
pp. 733-737 ◽  
Author(s):  
Massimo Galluppi ◽  
Lutz Geelhaar ◽  
Henning Riechert
Keyword(s):  
Quantum Well ◽  
Dilute Nitride ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Band Offsets ◽  
Quantum Well Structures

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

1986 ◽  
Vol 48 (14) ◽  
pp. 940-942 ◽  
Author(s):  
R. K. Tsui ◽  
G. D. Kramer ◽  
J. A. Curless ◽  
M. S. Peffley
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Infrared absorption in HgCdTe/CdTe single quantum well structures

1993 ◽  
Vol 8 (1S) ◽  
pp. S296-S299 ◽  
Author(s):  
R Sizmann ◽  
P Helgesen ◽  
H Steen ◽  
T Skauli ◽  
T Colin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Absorption ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Exciton localization in InGaN/GaN single quantum well structures

2003 ◽  
Vol 240 (2) ◽  
pp. 344-347 ◽  
Author(s):  
D. M. Graham ◽  
A. Soltani Vala ◽  
P. Dawson ◽  
M. J. Godfrey ◽  
M. J. Kappers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Exciton Localization

Photoluminescent Properties of ZnO/Zn0.8Mg0.2O Nanorod Single-Quantum-Well Structures

2004 ◽  
Vol 108 (40) ◽  
pp. 15457-15460 ◽  
Author(s):  
Won Il Park ◽  
Sung Jin An ◽  
Jia Long Yang ◽  
Gyu-Chul Yi ◽  
Sangsu Hong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
Sign in / Sign up

Export Citation Format

Share Document