band offset
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Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 684-693
Author(s):  
Yu Kawano ◽  
Jakapan Chantana ◽  
Takayuki Negami ◽  
Takahito Nishimura ◽  
Abdurashid Mavlonov ◽  
...  

2021 ◽  
Vol 45 (6) ◽  
pp. 431-437
Author(s):  
Ahmed Redha Latrous ◽  
Ramdane Mahamdi ◽  
Naima Touafek ◽  
Marcel Pasquinelli

Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2, Voc = 0.757 V, FF = 65.6%, ɳ = 6.9%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 µm) and (ND = 1016 cm-3). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1%, Voc of 0.961 mV, FF of 67.3% and Jsc of 20.2 mA/cm2.


2021 ◽  
Vol 2086 (1) ◽  
pp. 012091
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
A S Gudovskikh ◽  
D A Kudryashov ◽  
...  

Abstract The article is based on an important characterization task to accurately evaluate the properties of the layers, their interfaces with c-Si, and to select the best candidates to integrate them into a c-Si-based solar cell. The work has shown that GaP could be doped with n-type doping, thus providing a selective contact for the electrons, and has a significant valence band offset with c-Si, making it an excellent candidate as a selective contact, without requiring an additional ITO layer.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3054
Author(s):  
Amal Ghribi ◽  
Rim Ben Aich ◽  
Kaïs Boujdaria ◽  
Thierry Barisien ◽  
Laurent Legrand ◽  
...  

Owing to their flexible chemical synthesis and the ability to shape nanostructures, lead halide perovskites have emerged as high potential materials for optoelectronic devices. Here, we investigate the excitonic band edge states and their energies levels in colloidal inorganic lead halide nanoplatelets, particularly the influence of dielectric effects, in a thin quasi-2D system. We use a model including band offset and dielectric confinements in the presence of Coulomb interaction. Short- and long-range contributions, modified by dielectric effects, are also derived, leading to a full modelization of the exciton fine structure, in cubic, tetragonal and orthorhombic phases. The fine splitting structure, including dark and bright excitonic states, is discussed and compared to recent experimental results, showing the importance of both confinement and dielectric contributions.


2021 ◽  
Vol 130 (17) ◽  
pp. 175303
Author(s):  
Sahadeb Ghosh ◽  
Madhusmita Baral ◽  
Jayanta Bhattacharjee ◽  
Rajiv Kamparath ◽  
S. D. Singh ◽  
...  

2021 ◽  
Vol 42 (11) ◽  
pp. 112102
Author(s):  
Yuying Hu ◽  
Chen Qiu ◽  
Tao Shen ◽  
Kaike Yang ◽  
Huixiong Deng

Abstract Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III–V systems as examples, the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III–V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.


2021 ◽  
Vol 8 (21) ◽  
pp. 2170143
Author(s):  
Jung Sun Eo ◽  
Jaeho Shin ◽  
Seunghoon Yang ◽  
Takgyeong Jeon ◽  
Jaeho Lee ◽  
...  

Author(s):  
Pegah S. Mirabedini ◽  
Mahesh R. Neupane ◽  
P. Alex Greaney

AbstractWe report an ab initio study of the effect of rippling on the structural and electronic properties of the hexagonal Boron Nitride (hBN) and graphene two-dimensional (2D) layers and heterostructures created by placing these layers on the Hydrogen-terminated (H-) diamond (100) surface. Surprisingly, in graphene, rippling does not open a band gap at the Dirac point but does cause the Dirac cone to be shifted and distorted. For the 2D/H-diamond (100) heterostructures, a combined sampling and a clustering approach were used to find the most favorable alignment of the 2D layers. Heterostructures with rippled layers were found to be the most stable. A larger charge transfer was observed in the heterostructures with rippled hBN (graphene) than their planner counterparts. Band offset analysis indicates a Type-II band alignment for both the wavy and planar heterostructures, with the corrugated structure having stronger hole confinement due to the larger valence band offset between the hBN layer and the H-diamond (100) surface. Graphic abstract


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