Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

scholarly journals The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

2014 ◽  
Vol 105 (9) ◽  
pp. 092106 ◽  
Author(s):  
M. J. Davies ◽  
P. Dawson ◽  
F. C.-P. Massabuau ◽  
R. A. Oliver ◽  
M. J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Si Doped

MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures

1991 ◽  
Vol 107 (1-4) ◽  
pp. 578-582 ◽  
Author(s):  
Makoto Kondo ◽  
Kay Domen ◽  
Chikashi Anayama ◽  
Toshiyuki Tanahashi ◽  
Kazuo Nakajima
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Movpe Growth

scholarly journals Effect of growth interruption on optical properties of In-rich InGaN∕GaN single quantum well structures

2006 ◽  
Vol 100 (4) ◽  
pp. 043520 ◽  
Author(s):  
Yuanping Sun ◽  
Yong-Hoon Cho ◽  
H. M. Kim ◽  
T. W. Kang ◽  
S. Y. Kwon ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Growth Interruption

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
Sign in / Sign up

Export Citation Format

Share Document