Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
1999 ◽
Vol 28
(3)
◽
pp. 246-251
◽
2004 ◽
Vol 262
(1-4)
◽
pp. 145-150
◽
1994 ◽
Vol 145
(1-4)
◽
pp. 866-874
◽
Keyword(s):
1999 ◽
Vol 30
(4-5)
◽
pp. 455-459
◽
2002 ◽
Vol 234
(4)
◽
pp. 631-636
◽
1993 ◽
Vol 22
(5)
◽
pp. 529-535
◽
1987 ◽
Vol 6
(4)
◽
pp. 331-345
◽
1999 ◽
Vol 203
(4)
◽
pp. 481-485
◽