Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

1999 ◽  
Vol 28 (3) ◽  
pp. 246-251 ◽  
Author(s):  
Kenji Uchida ◽  
Masahiko Kawata ◽  
Tao Yang ◽  
Shigeo Goto ◽  
Tomoyoshi Mishima ◽  
...  
1999 ◽  
Vol 2 (2) ◽  
pp. 49-57
Author(s):  
Wilson de Carvalho Jr ◽  
Ayrton André Bernussi ◽  
Mário Tosi Furtado ◽  
Ângelo Luiz Gobbi ◽  
Mônica A. Cotta

1991 ◽  
Vol 59 (4) ◽  
pp. 405-407 ◽  
Author(s):  
D. Coblentz ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
A. M. Sergent ◽  
S. N. G. Chu ◽  
...  

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