Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.082 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 145-150 ◽

Author(s):

V. Potin ◽

E. Hahn ◽

A. Rosenauer ◽

D. Gerthsen ◽

B. Kuhn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.336937 ◽

1986 ◽

Vol 59 (8) ◽

pp. 2828-2832 ◽

Author(s):

S. Zemon ◽

P. Norris ◽

E. S. Koteles ◽

G. Lambert

Keyword(s):

Magnetic Field ◽

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Applied Magnetic Field ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

Microelectronics Journal ◽

10.1016/s0026-2692(98)00152-9 ◽

1999 ◽

Vol 30 (4-5) ◽

pp. 455-459 ◽

Author(s):

Soohaeng Cho ◽

A. Sanz-Hervás ◽

Jongseok Kim ◽

A. Majerfeld ◽

C. Villar ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures ◽

Gaas Substrates

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Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-999-0022-1 ◽

1999 ◽

Vol 28 (3) ◽

pp. 246-251 ◽

Author(s):

Kenji Uchida ◽

Masahiko Kawata ◽

Tao Yang ◽

Shigeo Goto ◽

Tomoyoshi Mishima ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures ◽

Sapphire Substrates ◽

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Interface structures in quantum wells controlled by metalorganic vapor phase epitaxy and molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00553-2 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 379-383 ◽

Author(s):

N. Inoue ◽

K. Ikuta ◽

M. Shinohara ◽

J. Osaka

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Interface Structures

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GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01750-x ◽

2002 ◽

Vol 234 (4) ◽

pp. 631-636 ◽

Author(s):

T Hakkarainen ◽

J Toivonen ◽

M Sopanen ◽

H Lipsanen

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.350949 ◽

1992 ◽

Vol 71 (7) ◽

pp. 3300-3306 ◽

Author(s):

K. Streubel ◽

V. Härle ◽

F. Scholz ◽

M. Bode ◽

M. Grundmann

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Interfacial Properties ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Excitonic properties of Zn1−xCdxSe/ZnSe quantum well structures grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02661626 ◽

1993 ◽

Vol 22 (5) ◽

pp. 529-535 ◽

Author(s):

A. Ohki ◽

K. Ando ◽

S. Zembutsu

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures ◽

Excitonic Properties

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Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.4707386 ◽

2012 ◽

Vol 100 (18) ◽

pp. 181603 ◽

Author(s):

R. Kudrawiec ◽

M. Gladysiewicz ◽

L. Janicki ◽

J. Misiewicz ◽

G. Cywinski ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Fermi Level ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Fermi Level Position

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Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)1

Fiber & Integrated Optics ◽

10.1080/01468038708222973 ◽

1987 ◽

Vol 6 (4) ◽

pp. 331-345 ◽

Author(s):

Fred Roozeboom ◽

André Sikkema ◽

Laurens W. Molenkamp

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

High Power Lasers ◽

Quantum Well Structures

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Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00114-1 ◽

1999 ◽

Vol 203 (4) ◽

pp. 481-485 ◽

Author(s):

J.R Chang ◽

Y.K Su ◽

D.H Jaw ◽

H.P Shiao ◽

W Lin

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Quantum Well Structures ◽

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