Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well

Author(s):  
S. Sucu ◽  
S. Minez ◽  
I. Erdogan
2001 ◽  
Vol 15 (05) ◽  
pp. 527-535 ◽  
Author(s):  
FENG-QI ZHAO ◽  
XI XIA LIANG ◽  
SHILIANG BAN

The effects of the electron–phonon interaction on the electron (or hole) energy levels in parabolic quantum well (PQW) structures are studied. The ground state, the first excited state and the transition energy of the electron (or hole) in the GaAs/Al 0.3 Ga 0.7 As parabolic quantum well are calculated by using a modified Lee–Low–Pines Variational method. The numerical results are given and discussed. A comparison between the theoretical and experimental results is made.


1968 ◽  
Vol 166 (4) ◽  
pp. 988-991 ◽  
Author(s):  
R. A. Mendelson ◽  
R. T. Carpenter

1963 ◽  
Vol 47 ◽  
pp. 443-448 ◽  
Author(s):  
Joseph W. Harpster ◽  
Donald L. Bennett ◽  
Karl J. Casper

ChemInform ◽  
2010 ◽  
Vol 24 (22) ◽  
pp. no-no
Author(s):  
F. LAHMANI ◽  
E. BREHERET ◽  
A. ZEHNACKER-RENTIEN ◽  
T. EBATA

1965 ◽  
Vol 70 (1) ◽  
pp. 28-32 ◽  
Author(s):  
H.J. Körner ◽  
U. Ortabasi

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