Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam research reactor

2020 ◽  
Vol 31 (4) ◽  
Author(s):  
M. Salhi ◽  
B. Mohammedi ◽  
S. Laouar ◽  
M. Dougdag ◽  
M. Touiza ◽  
...  
Keyword(s):  
Conceptual Design ◽  
Research Reactor ◽  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Neutron Transmutation ◽  
Irradiation Device

Commissioning of the New Irradiation Device for Neutron Transmutation Doping

2014 ◽  
Vol 61 (4) ◽  
pp. 2300-2305 ◽  
Author(s):  
Michal Koleska ◽  
Jaroslav Soltes ◽  
Miroslav Vins ◽  
Ladislav Viererbl ◽  
Jaroslav Ernest ◽  
...  
Keyword(s):  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Neutron Transmutation ◽  
Irradiation Device

Neutron transmutation doping conceptual design

Kerntechnik ◽  
2010 ◽  
Vol 75 (1-2) ◽  
pp. 35-37
Author(s):  
M. M. Osman ◽  
S. A. Agamy ◽  
M. S. Nagy ◽  
M. Sultan
Keyword(s):  
Conceptual Design ◽  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Neutron Transmutation

Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor

2015 ◽  
Vol 1084 ◽  
pp. 309-312
Author(s):  
Valery A. Varlachev ◽  
Alexey V. Golovatsky ◽  
Evgeny G. Emets ◽  
Yana A. Butko
Keyword(s):  
Radiation Field ◽  
Nuclear Reactor ◽  
Research Reactor ◽  
Electronic Devices ◽  
Irradiation Zone ◽  
Neutron Transmutation Doping ◽  
Analytical Consideration ◽  
Transmutation Doping ◽  
Neutron Transmutation ◽  
Pool Type

The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.

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