Flowing Refractometer for Feed Water State Control in the Second Loop of Nuclear Reactor

The necessity to control the feed water state in the second loop of a nuclear power plant nuclear reactor is justified. The different methods of the state control of flowing water in the pipeline are reviewed. It has been established that controlling the feed water state should not result in irreversible changes in its chemical composition and physical structure. A change in the composition or structure of feed water leads to a change in its heat capacity. The heat transfer deteriorates, the production of electrical energy in the installation decreases, and the additional release of heat into the atmosphere increases. This process also occurs during the heat capacity changes for other reasons. The method for controlling the feed water heat capacity by measuring the value of the refractive index n is developed. The design of a flow-through refractometer based on the total internal reflection for control of the feed water state in the stream is made. The dependence of the heat capacity change of feed water from the refractive index is established. The results of research on different types of water are presented.

SPECIFIC FEATURES OF APPLICATION OF CADMIUM AS A NEUTRON-ABSORBING SCREEN WHILE DOPING SILICON IN A NUCLEAR REACTOR

The gradient of the neutron field in a nuclear reactor and the requirements for the permissible spread of the specific electrical resistance over the volume of the silicon ingot makes it necessary to develop an irradiation device. This is especially true for large silicon ingots. One of the options for reducing the gradient of the neutron flux along the height of the ingot is the use of neutron-absorbing screens in the design of the irradiation device. At the WWR-K reactor, cadmium with a natural isotopic composition is used as a neutron-absorbing screen material. The paper presents the results of a study of an irradiation device with a cadmium screen. The effect of a cadmium screen on the neutron-physical characteristics of an irradiation device for silicon doping is shown.