Parametric analysis of the neutron transmutation doping (NTD) facility at the Egyptian Second Research Reactor (ETRR-2)

2005 ◽  
Vol 32 (3) ◽  
pp. 355-365
Author(s):  
M.Y. Khalil ◽  
M.A. Sultan ◽  
M.H. Hassan ◽  
A.Y. Abdel-Fattah
2015 ◽  
Vol 1084 ◽  
pp. 309-312
Author(s):  
Valery A. Varlachev ◽  
Alexey V. Golovatsky ◽  
Evgeny G. Emets ◽  
Yana A. Butko

The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.


Author(s):  
Do Hyun Kim ◽  
Han Rim Lee ◽  
Jiseok Kim ◽  
Myong-Seop Kim ◽  
Byung-Gun Park

1993 ◽  
Vol 88 (5) ◽  
pp. 369-371 ◽  
Author(s):  
N.A. Sobolev ◽  
E.I. Shek ◽  
E.P. Shabalin

2006 ◽  
Vol 32 (6) ◽  
pp. 550-553 ◽  
Author(s):  
A. N. Ionov ◽  
P. G. Baranov ◽  
B. Ya. Ber ◽  
A. D. Bulanov ◽  
O. N. Godisov ◽  
...  

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