An analysis of the B 2Σ+ − X 2Σ+ emission of SiN. Dependence of the electronic transition moment on the SiN internuclear distance

1993 ◽  
Vol 208 (3-4) ◽  
pp. 328-334 ◽  
Author(s):  
Haruhiko Ito ◽  
Kaoru Suzuki ◽  
Tamotsu Kondow ◽  
Kozo Kuchitsu
1954 ◽  
Vol 32 (8) ◽  
pp. 515-521 ◽  
Author(s):  
P. A. Fraser

A method is described that will give the variation, as a function of internuclear distance, of the electronic transition moment governing intensities in diatomic molecular band systems. Reliable theoretical results and good experimental intensities are used conjointly to find this variation. Once smoothed, the trend may be replaced into the overlap integrals to give relative vibrational transition probabilities better than those given by the approximation ‘overlap integrals squared’, and presumably better than those deduced directly from experiment, since the latter are not smoothed. Limits on the application of the method are suggested; however many band systems fall within these limits.


Sign in / Sign up

Export Citation Format

Share Document